Single crystal growth of gallium nitride substrates using an high pressure high temperature process

Rajiv K. Singh; Donald R. Gilbert; Francis Kelly; Robert Chodelka; Reza Abbaschian; Stephen Pearton; Alexander Novikov; Nikolay Patrin; John Budai

doi:10.1557/proc-622-t4.8.1

Single crystal growth of gallium nitride substrates using an high pressure high temperature process

Rajiv K. Singh, Donald R. Gilbert, Francis Kelly, Robert Chodelka, Reza Abbaschian, Stephen Pearton, Alexander Novikov, Nikolay Patrin, John Budai

Research output: Contribution to journal › Article › peer-review

Abstract

The use of standard bulk semiconductor crystal growth processes for the production of GaN is prohibited by both the high melt temperature of GaN and thermal decomposition of the compound into Ga metal and N₂ gas. We have employed a novel hydrostatic pressure system to grow GaN crystals. A high temperature, ultra-high pressure process was developed using a solid-phase nitrogen source to form GaN crystals in a Ga metal melt. Using a thermal gradient diffusion process, in which nitrogen dissolves in the high temperature region of the metal melt and diffuses to the lower temperature, lower solubility region, high quality crystals up to ∼1 mm in size were formed, as determined by SEM, X-ray diffraction and micro-Raman analysis.

Original language	English
Pages (from-to)	T481-T486
Journal	Materials Research Society Symposium - Proceedings
Volume	622
DOIs	https://doi.org/10.1557/proc-622-t4.8.1
State	Published - 2000
Externally published	Yes

Funding

We would like to acknowledge the valuable assistance of S. MacDonald of the University of Florida for the acquisition of micro-Raman spectral data. Working in collaboration with the University of Florida, The Gemesis Corporation conducted its work under SBIR Grant No. N00014-99-M-0151, which was monitored by Colin Wood of the Office of Naval Research.

Funders	Funder number
Office of Naval Research
University of Florida	N00014-99-M-0151

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abstract = "The use of standard bulk semiconductor crystal growth processes for the production of GaN is prohibited by both the high melt temperature of GaN and thermal decomposition of the compound into Ga metal and N2 gas. We have employed a novel hydrostatic pressure system to grow GaN crystals. A high temperature, ultra-high pressure process was developed using a solid-phase nitrogen source to form GaN crystals in a Ga metal melt. Using a thermal gradient diffusion process, in which nitrogen dissolves in the high temperature region of the metal melt and diffuses to the lower temperature, lower solubility region, high quality crystals up to ∼1 mm in size were formed, as determined by SEM, X-ray diffraction and micro-Raman analysis.",

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AU - Singh, Rajiv K.

AU - Gilbert, Donald R.

AU - Kelly, Francis

AU - Chodelka, Robert

AU - Abbaschian, Reza

AU - Pearton, Stephen

AU - Novikov, Alexander

AU - Patrin, Nikolay

AU - Budai, John

PY - 2000

Y1 - 2000

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AB - The use of standard bulk semiconductor crystal growth processes for the production of GaN is prohibited by both the high melt temperature of GaN and thermal decomposition of the compound into Ga metal and N2 gas. We have employed a novel hydrostatic pressure system to grow GaN crystals. A high temperature, ultra-high pressure process was developed using a solid-phase nitrogen source to form GaN crystals in a Ga metal melt. Using a thermal gradient diffusion process, in which nitrogen dissolves in the high temperature region of the metal melt and diffuses to the lower temperature, lower solubility region, high quality crystals up to ∼1 mm in size were formed, as determined by SEM, X-ray diffraction and micro-Raman analysis.

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Single crystal growth of gallium nitride substrates using an high pressure high temperature process

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