Simulation study of various factors affecting the performance of vertical organic field-effect transistors

Keyphrases

• Simulation Study 100%
• Vertical Organic Field-effect Transistor (VOFET) 100%
• High Current Density 28%
• Charge Carrier Transport 28%
• Processing Cost 28%
• Contact Barrier 28%
• Device Geometry 28%
• Charge Carriers 14%
• Charge Accumulation 14%
• Fill Factor 14%
• Low-voltage Operation 14%
• Organic Semiconductors 14%
• Low-cost Method 14%
• Channel Architecture 14%
• Organic Electronics 14%
• Operating Frequency 14%
• Electronic Applications 14%
• Gate Dielectric 14%
• Insulating Layer 14%
• Barrier Properties 14%
• Processing Complexity 14%
• Semiconductor Properties 14%
• Subthreshold Swing 14%
• Short Channel 14%
• Off-state Current 14%
• On-state Current 14%
• Simulation-based 14%
• Device Architecture 14%

Engineering

• Organic field effect transistors 100%
• Charge Carrier 42%
• Simulation Result 28%
• High Current Density 28%
• Main Problem 14%
• Fill Factor 14%
• Operating Voltage 14%
• Organic Semiconductor 14%
• Operating Frequency 14%
• Gate Dielectric 14%
• Insulating Layer 14%
• Processing Cost 14%
• Organic Electronics 14%
• Semiconductor Property 14%

Material Science

• Organic Field Effect Transistors 100%
• Charge Carrier 42%
• Density 28%
• Carrier Transport 28%
• Semiconductor Property 14%
• Dielectric Material 14%