Simulated doping of Si from first principles using pseudoatoms

Keyphrases

• First-principles 100%
• Pseudo-atom 100%
• Electronic Structure 50%
• Fermi Level 50%
• Doping Level 50%
• P-n Junction 50%
• System Size 50%
• Computational Cost 50%
• Solid-state Electronics 50%
• Si(111) Surface 50%
• Work Function 50%
• Pseudopotential 50%
• Doping Dependence 50%
• Doped Semiconductor 50%
• Net Charge 50%
• Charge Carrier Concentration 50%
• Space Charge Region 50%
• Heavily Doped 50%
• Nuclear Charge 50%
• Minimal Perturbation 50%
• Semiconductor Physics 50%
• Forbidden Gap 50%
• Passivated 50%

Material Science

• Charge Carrier 100%
• Electronic Structure 100%
• Silicon 100%
• Carrier Concentration 100%
• Semiconductor Doping 100%