Silver endotaxy in silicon under various ambient conditions and their use as surface enhanced Raman spectroscopy substrates

R. R. Juluri, A. Ghosh, A. Bhukta, R. Sathyavathi, P. V. Satyam

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

Search for reliable, robust and efficient substrates for surface enhanced Raman spectroscopy (SERS) leads to the growth of various shapes and nanostructures of noble metals, and in particular, Ag nanostructures for this purpose. Coherently embedded (also known as endotaxial) Ag nanostructures in silicon substrates can be made robust and reusable SERS substrates. In this paper, we show the possibility of the growth of Ag endotaxial structures in Si crystal during Ar and low-vacuum annealing conditions while this is absent in O2 and ultra high vacuum (UHV) annealing conditions and along with their respective use as SERS substrates. Systems annealed under air-annealing and low-vacuum conditions were found to show larger enhancement factors (typically ≠5 × 105 in SERS measurement for 0.5 nM Crystal Violet (CV) molecule) while the systems prepared under UHV-annealing conditions (where no endotaxial Ag structures were formed) were found to be not effective as SERS substrates. Extensive electron microscopy, synchrotron X-ray diffraction and Rutherford backscattering spectrometry techniques were used to understand the structural aspects.

Original languageEnglish
Pages (from-to)88-94
Number of pages7
JournalThin Solid Films
Volume586
DOIs
StatePublished - 1 Jul 2015
Externally publishedYes

Bibliographical note

Publisher Copyright:
© 2015 Elsevier B.V.

Keywords

  • Ag nanostructures
  • Buried interfaces
  • Crystal
  • Electron microscopy
  • Endotaxy Embedded
  • Rutherford backscattering spectrometry
  • SERS substrates
  • Violet

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