Silver endotaxy in silicon under various ambient conditions and their use as surface enhanced Raman spectroscopy substrates

R. R. Juluri; A. Ghosh; A. Bhukta; R. Sathyavathi; P. V. Satyam

doi:10.1016/j.tsf.2015.02.079

Silver endotaxy in silicon under various ambient conditions and their use as surface enhanced Raman spectroscopy substrates

R. R. Juluri, A. Ghosh, A. Bhukta, R. Sathyavathi, P. V. Satyam

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Search for reliable, robust and efficient substrates for surface enhanced Raman spectroscopy (SERS) leads to the growth of various shapes and nanostructures of noble metals, and in particular, Ag nanostructures for this purpose. Coherently embedded (also known as endotaxial) Ag nanostructures in silicon substrates can be made robust and reusable SERS substrates. In this paper, we show the possibility of the growth of Ag endotaxial structures in Si crystal during Ar and low-vacuum annealing conditions while this is absent in O₂ and ultra high vacuum (UHV) annealing conditions and along with their respective use as SERS substrates. Systems annealed under air-annealing and low-vacuum conditions were found to show larger enhancement factors (typically â‰ 5 × 10⁵ in SERS measurement for 0.5 nM Crystal Violet (CV) molecule) while the systems prepared under UHV-annealing conditions (where no endotaxial Ag structures were formed) were found to be not effective as SERS substrates. Extensive electron microscopy, synchrotron X-ray diffraction and Rutherford backscattering spectrometry techniques were used to understand the structural aspects.

Original language	English
Pages (from-to)	88-94
Number of pages	7
Journal	Thin Solid Films
Volume	586
DOIs	https://doi.org/10.1016/j.tsf.2015.02.079
State	Published - 1 Jul 2015
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 2015 Elsevier B.V.

Funding

P V Satyam would like to thank the Department of Atomic Energy, Government of India for project no. 12-R&D-IOP-5.09-0100 . The authors would like to acknowledge Mr. Ajith Dash and Dr. B. K. Jena for their help in performing SERS experiments at the Institute of Minerals and Material Technology, Bhubaneswar.

Funders	Funder number
Department of Atomic Energy, Government of India	12-R, D-IOP-5.09-0100

Keywords

Ag nanostructures
Buried interfaces
Crystal
Electron microscopy
Endotaxy Embedded
Rutherford backscattering spectrometry
SERS substrates
Violet

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abstract = "Search for reliable, robust and efficient substrates for surface enhanced Raman spectroscopy (SERS) leads to the growth of various shapes and nanostructures of noble metals, and in particular, Ag nanostructures for this purpose. Coherently embedded (also known as endotaxial) Ag nanostructures in silicon substrates can be made robust and reusable SERS substrates. In this paper, we show the possibility of the growth of Ag endotaxial structures in Si crystal during Ar and low-vacuum annealing conditions while this is absent in O2 and ultra high vacuum (UHV) annealing conditions and along with their respective use as SERS substrates. Systems annealed under air-annealing and low-vacuum conditions were found to show larger enhancement factors (typically {\^a}‰ 5 × 105 in SERS measurement for 0.5 nM Crystal Violet (CV) molecule) while the systems prepared under UHV-annealing conditions (where no endotaxial Ag structures were formed) were found to be not effective as SERS substrates. Extensive electron microscopy, synchrotron X-ray diffraction and Rutherford backscattering spectrometry techniques were used to understand the structural aspects.",

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AU - Ghosh, A.

AU - Bhukta, A.

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AU - Satyam, P. V.

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Silver endotaxy in silicon under various ambient conditions and their use as surface enhanced Raman spectroscopy substrates

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Bibliographical note

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Keywords

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