Silicon photodetector for integrated lithium niobate photonics

Boris Desiatov; Marko Lončar

doi:10.1063/1.5118901

Silicon photodetector for integrated lithium niobate photonics

Boris Desiatov, Marko Lončar

Research output: Contribution to journal › Article › peer-review

28 Scopus citations

Abstract

We demonstrate the integration of an amorphous silicon photodetector with a thin film lithium niobate photonic platform operating in the visible wavelength range. We present the details of the design, fabrication, integration, and experimental characterization of this metal-semiconductor-metal photodetector that features a responsivity of 22 mA/W to 37 mA/W over the wide optical bandwidth spanning in the 635 nm-850 nm wavelength range.

Original language	English
Article number	121108
Journal	Applied Physics Letters
Volume	115
Issue number	12
DOIs	https://doi.org/10.1063/1.5118901
State	Published - 16 Sep 2019
Externally published	Yes

Bibliographical note

Funding Information:
Lithium niobate devices were fabricated at the Center for Nanoscale Systems (CNS) at Harvard, a member of the National Nanotechnology Infrastructure Network, supported by the NSF under Award No. 1541959.This work was supported in part by the National Science Foundation (NSF) (Nos. ECCS-1740296 E2CDA and IIP-1827720), Defense Advanced Research Projects Agency (DARPA) (No. W31P4Q-15-1-0013), and Air Force Office of Scientific Research (AFOSR) (MURI: No. FA9550-12-1-0389).

Publisher Copyright:
© 2019 Author(s).

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Silicon photodetector for integrated lithium niobate photonics

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