Silicon photodetector for integrated lithium niobate photonics

Boris Desiatov, Marko Lončar

Research output: Contribution to journalArticlepeer-review

43 Scopus citations

Abstract

We demonstrate the integration of an amorphous silicon photodetector with a thin film lithium niobate photonic platform operating in the visible wavelength range. We present the details of the design, fabrication, integration, and experimental characterization of this metal-semiconductor-metal photodetector that features a responsivity of 22 mA/W to 37 mA/W over the wide optical bandwidth spanning in the 635 nm-850 nm wavelength range.

Original languageEnglish
Article number121108
JournalApplied Physics Letters
Volume115
Issue number12
DOIs
StatePublished - 16 Sep 2019
Externally publishedYes

Bibliographical note

Publisher Copyright:
© 2019 Author(s).

Funding

Lithium niobate devices were fabricated at the Center for Nanoscale Systems (CNS) at Harvard, a member of the National Nanotechnology Infrastructure Network, supported by the NSF under Award No. 1541959.This work was supported in part by the National Science Foundation (NSF) (Nos. ECCS-1740296 E2CDA and IIP-1827720), Defense Advanced Research Projects Agency (DARPA) (No. W31P4Q-15-1-0013), and Air Force Office of Scientific Research (AFOSR) (MURI: No. FA9550-12-1-0389).

FundersFunder number
National Science Foundation1740296, 1827720, 1541959

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