Silicon Orientation Impact on the Photodetection Performances of Topological Insulator Bi₂Se₃/Si Heterostructure

Topological insulators, often known as TIs, serve as incredibly exciting prospects in optoelectronic devices since they have excellent qualities and outstanding characteristics. In this regard, an efficient photodetector utilizing 60 nm Bh₂Se₃TI film with different Si substrate orientations i.e. (111) and (100) named as (GA and G_B) is reported. XRD and Raman's spectroscopy show an impurity-free deposition. Utilizing the substantial light absorption, both samples GA and G_B achieve a responsivity of 7.7 A/W and 12.5 A/W & detectivity of 2.9 × 10¹¹ and 1.13 ×10¹² respectively corresponding to 1100 nm revealing that substrate orientation has a significant effect on Photoresponse performance.