Silicon on insulator photo-activated modulator

Doron Abraham, Zeev Zalevsky, Avraham Chelly, Jossef Shappir, Michael Rosenbluh

Research output: Contribution to journalArticlepeer-review

10 Scopus citations


In this paper we present a novel concept for a photo-activated modulator device based on silicon on insulator (SOI-PAM) and in which the information is electronic while the modulation command is optical. Free carriers are generated by external illumination in the vicinity of the information channel. A side-gate potential selects the type of carriers controlling the electric resistance of the channel. The channel is surrounded by oxide trenches to avoid cross-talk current. Another side potential clears the control carriers allowing a high-frequency modulation like in a Metal-Oxide-Semiconductor field effect transistor (MOSFET) device. Since the control command is photonic, faster operation rates are anticipated. The proposed device has dimensions of less than 1 cubic micron.

Original languageEnglish
Pages (from-to)1429-1432
Number of pages4
JournalMicroelectronics Journal
Issue number12
StatePublished - Dec 2008

Bibliographical note

Funding Information:
The authors from Bar-Ilan University would like to thank the Horowitz Fund of Bar-Ilan University for supporting this research.


  • Electro-optical devices
  • Photonic intergrated circuits


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