Silicon on insulator photo-activated modulator

Doron Abraham; Zeev Zalevsky; Avraham Chelly; Jossef Shappir; Michael Rosenbluh

doi:10.1016/j.mejo.2008.06.075

Silicon on insulator photo-activated modulator

Doron Abraham, Zeev Zalevsky, Avraham Chelly, Jossef Shappir, Michael Rosenbluh

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

In this paper we present a novel concept for a photo-activated modulator device based on silicon on insulator (SOI-PAM) and in which the information is electronic while the modulation command is optical. Free carriers are generated by external illumination in the vicinity of the information channel. A side-gate potential selects the type of carriers controlling the electric resistance of the channel. The channel is surrounded by oxide trenches to avoid cross-talk current. Another side potential clears the control carriers allowing a high-frequency modulation like in a Metal-Oxide-Semiconductor field effect transistor (MOSFET) device. Since the control command is photonic, faster operation rates are anticipated. The proposed device has dimensions of less than 1 cubic micron.

Original language	English
Pages (from-to)	1429-1432
Number of pages	4
Journal	Microelectronics Journal
Volume	39
Issue number	12
DOIs	https://doi.org/10.1016/j.mejo.2008.06.075
State	Published - Dec 2008

Bibliographical note

Funding Information:
The authors from Bar-Ilan University would like to thank the Horowitz Fund of Bar-Ilan University for supporting this research.

Funding

The authors from Bar-Ilan University would like to thank the Horowitz Fund of Bar-Ilan University for supporting this research.

Funders	Funder number
Horowitz Fund of Bar-Ilan University

Keywords

Electro-optical devices
Photonic intergrated circuits

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10.1016/j.mejo.2008.06.075

Cite this

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title = "Silicon on insulator photo-activated modulator",

abstract = "In this paper we present a novel concept for a photo-activated modulator device based on silicon on insulator (SOI-PAM) and in which the information is electronic while the modulation command is optical. Free carriers are generated by external illumination in the vicinity of the information channel. A side-gate potential selects the type of carriers controlling the electric resistance of the channel. The channel is surrounded by oxide trenches to avoid cross-talk current. Another side potential clears the control carriers allowing a high-frequency modulation like in a Metal-Oxide-Semiconductor field effect transistor (MOSFET) device. Since the control command is photonic, faster operation rates are anticipated. The proposed device has dimensions of less than 1 cubic micron.",

keywords = "Electro-optical devices, Photonic intergrated circuits",

author = "Doron Abraham and Zeev Zalevsky and Avraham Chelly and Jossef Shappir and Michael Rosenbluh",

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AU - Abraham, Doron

AU - Zalevsky, Zeev

AU - Chelly, Avraham

AU - Shappir, Jossef

AU - Rosenbluh, Michael

N1 - Funding Information: The authors from Bar-Ilan University would like to thank the Horowitz Fund of Bar-Ilan University for supporting this research.

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AB - In this paper we present a novel concept for a photo-activated modulator device based on silicon on insulator (SOI-PAM) and in which the information is electronic while the modulation command is optical. Free carriers are generated by external illumination in the vicinity of the information channel. A side-gate potential selects the type of carriers controlling the electric resistance of the channel. The channel is surrounded by oxide trenches to avoid cross-talk current. Another side potential clears the control carriers allowing a high-frequency modulation like in a Metal-Oxide-Semiconductor field effect transistor (MOSFET) device. Since the control command is photonic, faster operation rates are anticipated. The proposed device has dimensions of less than 1 cubic micron.

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Silicon on insulator photo-activated modulator

Abstract

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