Short wavelength infrared pBn GaSb/AlAsSb/InPSb photodetector

D. Cohen-Elias; Y. Uliel; N. Cohen; I. Shafir; O. Westreich; M. Katz

doi:10.1016/j.infrared.2017.05.021

Short wavelength infrared pBn GaSb/AlAsSb/InPSb photodetector

D. Cohen-Elias
, Y. Uliel
, N. Cohen
, I. Shafir
, O. Westreich
, M. Katz

Soreq Nuclear Research Center
Elta Electronics Industries Ltd.

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

A pBn GaSb/AlAsSb/InPSb detector, with a photoluminescence peak at 2.9 µm, for the short wave infrared range was fabricated and characterized. At −0.5 V the dark current at 300 and 200 K was 1.5 × 10⁻¹ and 3.5 × 10⁻³ A/cm² and the detectivity was above 10⁹ and 10¹⁰ cm-Hz^1/2/Watt respectively. The quantum efficiency at λ = 2.2 µm and −0.5 V, for 300 K and 200 K, is 39% and 48% respectively. A simulation implies that a potential barrier for generated holes degrades the optical performances at zero bias. Electrical characteristics at different temperatures and details of the process flow are also described.

Original language	English
Pages (from-to)	81-85
Number of pages	5
Journal	Infrared Physics and Technology
Volume	85
DOIs	https://doi.org/10.1016/j.infrared.2017.05.021
State	Published - Sep 2017
Externally published	Yes

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© 2017 Elsevier B.V.

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title = "Short wavelength infrared pBn GaSb/AlAsSb/InPSb photodetector",

abstract = "A pBn GaSb/AlAsSb/InPSb detector, with a photoluminescence peak at 2.9 µm, for the short wave infrared range was fabricated and characterized. At −0.5 V the dark current at 300 and 200 K was 1.5 {\texttimes} 10−1 and 3.5 {\texttimes} 10−3 A/cm2 and the detectivity was above 109 and 1010 cm-Hz1/2/Watt respectively. The quantum efficiency at λ = 2.2 µm and −0.5 V, for 300 K and 200 K, is 39\% and 48\% respectively. A simulation implies that a potential barrier for generated holes degrades the optical performances at zero bias. Electrical characteristics at different temperatures and details of the process flow are also described.",

author = "D. Cohen-Elias and Y. Uliel and N. Cohen and I. Shafir and O. Westreich and M. Katz",

note = "Publisher Copyright: {\textcopyright} 2017 Elsevier B.V.",

year = "2017",

month = sep,

doi = "10.1016/j.infrared.2017.05.021",

language = "אנגלית",

volume = "85",

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journal = "Infrared Physics and Technology",

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TY - JOUR

T1 - Short wavelength infrared pBn GaSb/AlAsSb/InPSb photodetector

AU - Cohen-Elias, D.

AU - Uliel, Y.

AU - Cohen, N.

AU - Shafir, I.

AU - Westreich, O.

AU - Katz, M.

PY - 2017/9

Y1 - 2017/9

N2 - A pBn GaSb/AlAsSb/InPSb detector, with a photoluminescence peak at 2.9 µm, for the short wave infrared range was fabricated and characterized. At −0.5 V the dark current at 300 and 200 K was 1.5 × 10−1 and 3.5 × 10−3 A/cm2 and the detectivity was above 109 and 1010 cm-Hz1/2/Watt respectively. The quantum efficiency at λ = 2.2 µm and −0.5 V, for 300 K and 200 K, is 39% and 48% respectively. A simulation implies that a potential barrier for generated holes degrades the optical performances at zero bias. Electrical characteristics at different temperatures and details of the process flow are also described.

AB - A pBn GaSb/AlAsSb/InPSb detector, with a photoluminescence peak at 2.9 µm, for the short wave infrared range was fabricated and characterized. At −0.5 V the dark current at 300 and 200 K was 1.5 × 10−1 and 3.5 × 10−3 A/cm2 and the detectivity was above 109 and 1010 cm-Hz1/2/Watt respectively. The quantum efficiency at λ = 2.2 µm and −0.5 V, for 300 K and 200 K, is 39% and 48% respectively. A simulation implies that a potential barrier for generated holes degrades the optical performances at zero bias. Electrical characteristics at different temperatures and details of the process flow are also described.

UR - https://www.scopus.com/pages/publications/85020269465

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DO - 10.1016/j.infrared.2017.05.021

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AN - SCOPUS:85020269465

SN - 1350-4495

VL - 85

SP - 81

EP - 85

JO - Infrared Physics and Technology

JF - Infrared Physics and Technology

ER -

Short wavelength infrared pBn GaSb/AlAsSb/InPSb photodetector

Abstract

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