Short wavelength infrared InAs/InSb/AlSb type-II superlattice photodetector

D. Cohen-Elias; Y. Uliel; O. Klin; N. Snapi; E. Weiss; I. Shafir; O. Westreich; M. Katz

doi:10.1016/j.infrared.2017.01.005

Short wavelength infrared InAs/InSb/AlSb type-II superlattice photodetector

D. Cohen-Elias
, Y. Uliel
, O. Klin
, N. Snapi
, E. Weiss
, I. Shafir
, O. Westreich
, M. Katz

Soreq Nuclear Research Center
SemiConductor Devices

Research output: Contribution to journal › Article › peer-review

33 Scopus citations

Abstract

A photodetector based on InAs/InSb/AlSb type-II superlattice (T2SL) with thicknesses of 15, 1 and 4 monolayers respectively, was fabricated and characterized. The interface between InAs and AlAs of one InSb monolayer, increases the λ_cutoff to 3.3 μm, and improves the InAs/AlSb layer correlation and strain balancing. With a −0.5 V bias, the dark current at 300 and 200 K was 1.1 and 8.5 × 10⁻ ³ A/cm² respectively, and the quantum efficiency at λ = 2.75 μm, for both 300 K and 200 K, was 34%. The detectivity was above 10⁹ cm-Hz^1/2/W for 300 K and above 10¹⁰ cm-Hz^1/2/W for 200 K between 2.5 and 3 μm wavelength.

Original language	English
Pages (from-to)	82-86
Number of pages	5
Journal	Infrared Physics and Technology
Volume	84
DOIs	https://doi.org/10.1016/j.infrared.2017.01.005
State	Published - Aug 2017
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 2017 Elsevier B.V.

Access to Document

10.1016/j.infrared.2017.01.005

Cite this

@article{5622c60b85004439bc969e45b85f71a1,

title = "Short wavelength infrared InAs/InSb/AlSb type-II superlattice photodetector",

abstract = "A photodetector based on InAs/InSb/AlSb type-II superlattice (T2SL) with thicknesses of 15, 1 and 4 monolayers respectively, was fabricated and characterized. The interface between InAs and AlAs of one InSb monolayer, increases the λcutoff to 3.3 μm, and improves the InAs/AlSb layer correlation and strain balancing. With a −0.5 V bias, the dark current at 300 and 200 K was 1.1 and 8.5 {\texttimes} 10− 3 A/cm2 respectively, and the quantum efficiency at λ = 2.75 μm, for both 300 K and 200 K, was 34\%. The detectivity was above 109 cm-Hz1/2/W for 300 K and above 1010 cm-Hz1/2/W for 200 K between 2.5 and 3 μm wavelength.",

author = "D. Cohen-Elias and Y. Uliel and O. Klin and N. Snapi and E. Weiss and I. Shafir and O. Westreich and M. Katz",

note = "Publisher Copyright: {\textcopyright} 2017 Elsevier B.V.",

year = "2017",

month = aug,

doi = "10.1016/j.infrared.2017.01.005",

language = "אנגלית",

volume = "84",

pages = "82--86",

journal = "Infrared Physics and Technology",

issn = "1350-4495",

publisher = "Elsevier BV",

}

TY - JOUR

T1 - Short wavelength infrared InAs/InSb/AlSb type-II superlattice photodetector

AU - Cohen-Elias, D.

AU - Uliel, Y.

AU - Klin, O.

AU - Snapi, N.

AU - Weiss, E.

AU - Shafir, I.

AU - Westreich, O.

AU - Katz, M.

PY - 2017/8

Y1 - 2017/8

N2 - A photodetector based on InAs/InSb/AlSb type-II superlattice (T2SL) with thicknesses of 15, 1 and 4 monolayers respectively, was fabricated and characterized. The interface between InAs and AlAs of one InSb monolayer, increases the λcutoff to 3.3 μm, and improves the InAs/AlSb layer correlation and strain balancing. With a −0.5 V bias, the dark current at 300 and 200 K was 1.1 and 8.5 × 10− 3 A/cm2 respectively, and the quantum efficiency at λ = 2.75 μm, for both 300 K and 200 K, was 34%. The detectivity was above 109 cm-Hz1/2/W for 300 K and above 1010 cm-Hz1/2/W for 200 K between 2.5 and 3 μm wavelength.

AB - A photodetector based on InAs/InSb/AlSb type-II superlattice (T2SL) with thicknesses of 15, 1 and 4 monolayers respectively, was fabricated and characterized. The interface between InAs and AlAs of one InSb monolayer, increases the λcutoff to 3.3 μm, and improves the InAs/AlSb layer correlation and strain balancing. With a −0.5 V bias, the dark current at 300 and 200 K was 1.1 and 8.5 × 10− 3 A/cm2 respectively, and the quantum efficiency at λ = 2.75 μm, for both 300 K and 200 K, was 34%. The detectivity was above 109 cm-Hz1/2/W for 300 K and above 1010 cm-Hz1/2/W for 200 K between 2.5 and 3 μm wavelength.

UR - https://www.scopus.com/pages/publications/85009773499

U2 - 10.1016/j.infrared.2017.01.005

DO - 10.1016/j.infrared.2017.01.005

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

AN - SCOPUS:85009773499

SN - 1350-4495

VL - 84

SP - 82

EP - 86

JO - Infrared Physics and Technology

JF - Infrared Physics and Technology

ER -

Short wavelength infrared InAs/InSb/AlSb type-II superlattice photodetector

Abstract

Bibliographical note

Access to Document

Other files and links

Fingerprint

Cite this