TY - JOUR
T1 - Short wavelength infrared InAs/InSb/AlSb type-II superlattice photodetector
AU - Cohen-Elias, D.
AU - Uliel, Y.
AU - Klin, O.
AU - Snapi, N.
AU - Weiss, E.
AU - Shafir, I.
AU - Westreich, O.
AU - Katz, M.
N1 - Publisher Copyright:
© 2017 Elsevier B.V.
PY - 2017/8
Y1 - 2017/8
N2 - A photodetector based on InAs/InSb/AlSb type-II superlattice (T2SL) with thicknesses of 15, 1 and 4 monolayers respectively, was fabricated and characterized. The interface between InAs and AlAs of one InSb monolayer, increases the λcutoff to 3.3 μm, and improves the InAs/AlSb layer correlation and strain balancing. With a −0.5 V bias, the dark current at 300 and 200 K was 1.1 and 8.5 × 10− 3 A/cm2 respectively, and the quantum efficiency at λ = 2.75 μm, for both 300 K and 200 K, was 34%. The detectivity was above 109 cm-Hz1/2/W for 300 K and above 1010 cm-Hz1/2/W for 200 K between 2.5 and 3 μm wavelength.
AB - A photodetector based on InAs/InSb/AlSb type-II superlattice (T2SL) with thicknesses of 15, 1 and 4 monolayers respectively, was fabricated and characterized. The interface between InAs and AlAs of one InSb monolayer, increases the λcutoff to 3.3 μm, and improves the InAs/AlSb layer correlation and strain balancing. With a −0.5 V bias, the dark current at 300 and 200 K was 1.1 and 8.5 × 10− 3 A/cm2 respectively, and the quantum efficiency at λ = 2.75 μm, for both 300 K and 200 K, was 34%. The detectivity was above 109 cm-Hz1/2/W for 300 K and above 1010 cm-Hz1/2/W for 200 K between 2.5 and 3 μm wavelength.
UR - http://www.scopus.com/inward/record.url?scp=85009773499&partnerID=8YFLogxK
U2 - 10.1016/j.infrared.2017.01.005
DO - 10.1016/j.infrared.2017.01.005
M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???
AN - SCOPUS:85009773499
SN - 1350-4495
VL - 84
SP - 82
EP - 86
JO - Infrared Physics and Technology
JF - Infrared Physics and Technology
ER -