Setup for in situ deep level transient spectroscopy of semiconductors during swift heavy ion irradiation

Sandeep Kumar; Sugam Kumar; Y. S. Katharria; C. P. Safvan; D. Kanjilal

doi:10.1063/1.2919173

Setup for in situ deep level transient spectroscopy of semiconductors during swift heavy ion irradiation

Sandeep Kumar, Sugam Kumar, Y. S. Katharria, C. P. Safvan, D. Kanjilal

Inter University Accelerator Centre India

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

A computerized system for in situ deep level characterization during irradiation in semiconductors has been set up and tested in the beam line for materials science studies of the 15 MV Pelletron accelerator at the Inter-University Accelerator Centre, New Delhi. This is a new facility for in situ irradiation-induced deep level studies, available in the beam line of an accelerator laboratory. It is based on the well-known deep level transient spectroscopy (DLTS) technique. High versatility for data manipulation is achieved through multifunction data acquisition card and LABVIEW. In situ DLTS studies of deep levels produced by impact of 100 MeV Si ions on Aun-Si (100) Schottky barrier diode are presented to illustrate performance of the automated DLTS facility in the beam line.

Original language	English
Article number	056103
Journal	Review of Scientific Instruments
Volume	79
Issue number	5
DOIs	https://doi.org/10.1063/1.2919173
State	Published - 2008
Externally published	Yes

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abstract = "A computerized system for in situ deep level characterization during irradiation in semiconductors has been set up and tested in the beam line for materials science studies of the 15 MV Pelletron accelerator at the Inter-University Accelerator Centre, New Delhi. This is a new facility for in situ irradiation-induced deep level studies, available in the beam line of an accelerator laboratory. It is based on the well-known deep level transient spectroscopy (DLTS) technique. High versatility for data manipulation is achieved through multifunction data acquisition card and LABVIEW. In situ DLTS studies of deep levels produced by impact of 100 MeV Si ions on Aun-Si (100) Schottky barrier diode are presented to illustrate performance of the automated DLTS facility in the beam line.",

author = "Sandeep Kumar and Sugam Kumar and Katharria, {Y. S.} and Safvan, {C. P.} and D. Kanjilal",

year = "2008",

doi = "10.1063/1.2919173",

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AU - Kumar, Sandeep

AU - Kumar, Sugam

AU - Katharria, Y. S.

AU - Safvan, C. P.

AU - Kanjilal, D.

PY - 2008

Y1 - 2008

N2 - A computerized system for in situ deep level characterization during irradiation in semiconductors has been set up and tested in the beam line for materials science studies of the 15 MV Pelletron accelerator at the Inter-University Accelerator Centre, New Delhi. This is a new facility for in situ irradiation-induced deep level studies, available in the beam line of an accelerator laboratory. It is based on the well-known deep level transient spectroscopy (DLTS) technique. High versatility for data manipulation is achieved through multifunction data acquisition card and LABVIEW. In situ DLTS studies of deep levels produced by impact of 100 MeV Si ions on Aun-Si (100) Schottky barrier diode are presented to illustrate performance of the automated DLTS facility in the beam line.

AB - A computerized system for in situ deep level characterization during irradiation in semiconductors has been set up and tested in the beam line for materials science studies of the 15 MV Pelletron accelerator at the Inter-University Accelerator Centre, New Delhi. This is a new facility for in situ irradiation-induced deep level studies, available in the beam line of an accelerator laboratory. It is based on the well-known deep level transient spectroscopy (DLTS) technique. High versatility for data manipulation is achieved through multifunction data acquisition card and LABVIEW. In situ DLTS studies of deep levels produced by impact of 100 MeV Si ions on Aun-Si (100) Schottky barrier diode are presented to illustrate performance of the automated DLTS facility in the beam line.

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Setup for in situ deep level transient spectroscopy of semiconductors during swift heavy ion irradiation

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