Separation of the electron localization and interaction in bismuth film resistance

Yu F. Kommik, E. I. Bukhshtab, A. V. Butenko, V. V. Andrievsky

Research output: Contribution to journalArticlepeer-review

30 Scopus citations

Abstract

The temperature dependence of the correction to electrical conductivity, Δσ, of Bi thin films (∼100-200 Å thick) is measured in the region of the electron localization and interaction effects. The measurements are made without magnetic field and with magnetic fields both perpendicular and parallel to the film surface. Without magnetic field the dependence Δσ(In T) is determined by the total contribution from both effects. As the magnetic field increases, the localization contribution to Δσ decreases and at certain field values it is essentially absent so that the character of Δσ(In T) dependence is determined only by the interaction effect.

Original languageEnglish
Pages (from-to)865-867
Number of pages3
JournalSolid State Communications
Volume44
Issue number6
DOIs
StatePublished - Nov 1982
Externally publishedYes

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