## Abstract

Evidence for p-d band crossing at a pressure of 40 kbar is presented for the layered compound TiS_{2}, based on the variation with pressure of the Hall coefficient, R_{H}, thermoelectric power, S, and resistivity, rho . Below 40 kbar the transport properties may be understood within the framework of an extrinsic semiconductor model with strong electron-phonon scattering. Under pressure the band overlap is estimated to change at the rate of 4.5+or-1.5 meV kbar^{-1}; this implies a band gap of 0.18+or-0.06 eV for TiS_{2} at ambient pressure. Analysis of the quantity -R _{H}/ rho ^{2}e as a function of pressure, and solution of the transport equations at 90 kbar are both used to show that in the semimetallic state of TiS_{2} the d-band electron mobility exceeds the p-band hole mobility. In contrast, the hole mobility is the greater at all pressures up to 90 kbar in TiSe_{2}.

Original language | English |
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Article number | 010 |

Pages (from-to) | 2713-2734 |

Number of pages | 22 |

Journal | Journal of Physics C: Solid State Physics |

Volume | 17 |

Issue number | 15 |

DOIs | |

State | Published - 1984 |

Externally published | Yes |

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