Semiconductor laser subject to intense feedback with variably rotated polarization

Noam Gross, Zav Shotan, Tal Galfsky, Lev Khaykovich

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

A semiconductor laser subject to delayed optical feedback is investigated in the limit of intense feedback power. Back-injection of light with variably rotated polarization reveals a symmetry breaking in laser emission spectra and output power when the rotation angle is changed in the vicinity of the orthogonal orientation. To explain the observed asymmetry we propose a simple geometric model which includes the relative contributions of both TE and TM lasing modes into the feedback light. In a range of feedback polarization rotation angles the emission spectra of the laser reveal a gap with width of more than a terahertz. The position of the gap and its width are shown to be regulated by means of feedback polarization rotation angle. We demonstrate that a theoretical approach, based on carrier density grating induced potential, explains our experimental results.

Original languageEnglish
Title of host publicationPhysics and Simulation of Optoelectronic Devices XVI
DOIs
StatePublished - 2008
EventPhysics and Simulation of Optoelectronic Devices XVI - San Jose, CA, United States
Duration: 21 Jan 200824 Jan 2008

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume6889
ISSN (Print)0277-786X

Conference

ConferencePhysics and Simulation of Optoelectronic Devices XVI
Country/TerritoryUnited States
CitySan Jose, CA
Period21/01/0824/01/08

Keywords

  • Optical feedback
  • Polarization
  • Semiconductor lasers

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