Semiconductor ferroelectric compositions and their use in photovoltaic devices

A. M Rappe (Inventor), P. K Davies (Inventor), J. E Spanier (Inventor), I Grinberg (Inventor), D. V West (Inventor)

Research output: Patent


Disclosed herein are ferroelectric perovskites characterized as having a band gap, Egap, of less than 2.5 eV. Also disclosed are compounds comprising a solid solution of KNbO3 and BaNi1/2Nb1/2O3-delta, wherein delta is in the range of from 0 to about 1. The specification also discloses photovoltaic devices comprising one or more solar absorbing layers, wherein at least one of the solar absorbing layers comprises a semiconducting ferroelectric layer. Finally, this patent application provides solar cell, comprising: a heterojunction of n- and p-type semiconductors characterized as comprising an interface layer disposed between the n- and p-type semiconductors, the interface layer comprising a semiconducting ferroelectric absorber layer capable of enhancing light absorption and carrier separation.
Original languageAmerican English
Patent numberUS20130104969 A1
StatePublished - 2012


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