Semiconductor ferroelectric compositions and their use in photovoltaic devices

A. M Rappe; P. K Davies; J. E Spanier; I Grinberg; D. V West

Semiconductor ferroelectric compositions and their use in photovoltaic devices

A. M Rappe (Inventor), P. K Davies (Inventor), J. E Spanier (Inventor), I Grinberg (Inventor), D. V West (Inventor)

Department of Chemistry

Research output: Patent

Abstract

Disclosed herein are ferroelectric perovskites characterized as having a band gap, Egap, of less than 2.5 eV. Also disclosed are compounds comprising a solid solution of KNbO3 and BaNi1/2Nb1/2O3-delta, wherein delta is in the range of from 0 to about 1. The specification also discloses photovoltaic devices comprising one or more solar absorbing layers, wherein at least one of the solar absorbing layers comprises a semiconducting ferroelectric layer. Finally, this patent application provides solar cell, comprising: a heterojunction of n- and p-type semiconductors characterized as comprising an interface layer disposed between the n- and p-type semiconductors, the interface layer comprising a semiconducting ferroelectric absorber layer capable of enhancing light absorption and carrier separation.

Original language	American English
Patent number	US20130104969 A1
State	Published - 2012

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Cite this

@misc{8fd632965a4e412fa629887776a5a794,

title = "Semiconductor ferroelectric compositions and their use in photovoltaic devices",

abstract = "Disclosed herein are ferroelectric perovskites characterized as having a band gap, Egap, of less than 2.5 eV. Also disclosed are compounds comprising a solid solution of KNbO3 and BaNi1/2Nb1/2O3-delta, wherein delta is in the range of from 0 to about 1. The specification also discloses photovoltaic devices comprising one or more solar absorbing layers, wherein at least one of the solar absorbing layers comprises a semiconducting ferroelectric layer. Finally, this patent application provides solar cell, comprising: a heterojunction of n- and p-type semiconductors characterized as comprising an interface layer disposed between the n- and p-type semiconductors, the interface layer comprising a semiconducting ferroelectric absorber layer capable of enhancing light absorption and carrier separation.",

author = "Rappe, {A. M} and Davies, {P. K} and Spanier, {J. E} and I Grinberg and West, {D. V}",

year = "2012",

language = "American English",

publisher = "USPTO",

type = "Patent",

note = "US20130104969 A1",

}

TY - PAT

T1 - Semiconductor ferroelectric compositions and their use in photovoltaic devices

AU - Rappe, A. M

AU - Davies, P. K

AU - Spanier, J. E

AU - Grinberg, I

AU - West, D. V

PY - 2012

Y1 - 2012

N2 - Disclosed herein are ferroelectric perovskites characterized as having a band gap, Egap, of less than 2.5 eV. Also disclosed are compounds comprising a solid solution of KNbO3 and BaNi1/2Nb1/2O3-delta, wherein delta is in the range of from 0 to about 1. The specification also discloses photovoltaic devices comprising one or more solar absorbing layers, wherein at least one of the solar absorbing layers comprises a semiconducting ferroelectric layer. Finally, this patent application provides solar cell, comprising: a heterojunction of n- and p-type semiconductors characterized as comprising an interface layer disposed between the n- and p-type semiconductors, the interface layer comprising a semiconducting ferroelectric absorber layer capable of enhancing light absorption and carrier separation.

AB - Disclosed herein are ferroelectric perovskites characterized as having a band gap, Egap, of less than 2.5 eV. Also disclosed are compounds comprising a solid solution of KNbO3 and BaNi1/2Nb1/2O3-delta, wherein delta is in the range of from 0 to about 1. The specification also discloses photovoltaic devices comprising one or more solar absorbing layers, wherein at least one of the solar absorbing layers comprises a semiconducting ferroelectric layer. Finally, this patent application provides solar cell, comprising: a heterojunction of n- and p-type semiconductors characterized as comprising an interface layer disposed between the n- and p-type semiconductors, the interface layer comprising a semiconducting ferroelectric absorber layer capable of enhancing light absorption and carrier separation.

UR - https://scholar.google.co.il/scholar?q=Semiconductor+ferroelectric+compositions+and+their+use+in++photovoltaic+devices&btnG=&hl=en&as_sdt=0%2C5

M3 - Patent

M1 - US20130104969 A1

PB - USPTO

ER -

Semiconductor ferroelectric compositions and their use in photovoltaic devices

Abstract

UN SDGs

Other files and links

Fingerprint

Cite this