Abstract
Charge pumps are useful to achieve on-chip boosted voltages in EPROM and other NVM devices. A new capacitive charge pump architecture is suggested which eliminates bulk effect by boosting the wells of transistors in the charge pump stages. In addition, the pump contains an internal voltage regulator, enabling it to supply a constant boosted output, regardless of process, environment and loading conditions. The pump operates from a 2.7 V supply, provides up to 10 mA at 8 V and occupies 2 mm2.
Original language | English |
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Pages (from-to) | I241-I244 |
Journal | Proceedings - IEEE International Symposium on Circuits and Systems |
Volume | 1 |
State | Published - 2003 |
Externally published | Yes |
Event | Proceedings of the 2003 IEEE International Symposium on Circuits and Systems - Bangkok, Thailand Duration: 25 May 2003 → 28 May 2003 |