TY - JOUR
T1 - Self-assembled monolayer assisted bonding of Si and InP
AU - Bakish, I.
AU - Artel, V.
AU - Ilovitsh, T.
AU - Shubely, M.
AU - Ben-Ezra, Y.
AU - Zadok, Avinoam
AU - Sukenik, C. N.
PY - 2012/8
Y1 - 2012/8
N2 - A versatile procedure for the low-temperature bonding of silicon and indium-phosphide to silicon is proposed and demonstrated. The procedure relies on the deposition and functionalization of self-assembled, single molecular layers on the surface of one substrate, and the subsequent attachment of the monolayer to the surface of the other substrate with or without its own monolayer coating. The process is applicable to the fabrication of hybrid-silicon, active photonic devices.
AB - A versatile procedure for the low-temperature bonding of silicon and indium-phosphide to silicon is proposed and demonstrated. The procedure relies on the deposition and functionalization of self-assembled, single molecular layers on the surface of one substrate, and the subsequent attachment of the monolayer to the surface of the other substrate with or without its own monolayer coating. The process is applicable to the fabrication of hybrid-silicon, active photonic devices.
UR - http://www.scopus.com/inward/record.url?scp=84866939439&partnerID=8YFLogxK
U2 - 10.1364/OME.2.001141
DO - 10.1364/OME.2.001141
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AN - SCOPUS:84866939439
SN - 2159-3930
VL - 2
SP - 1141
EP - 1148
JO - Optical Materials Express
JF - Optical Materials Express
IS - 8
ER -