Sb₂(S, Se)_3-based photovoltaic cell with MoS₂ as a hole transport layer: a numerical investigation

Antimony chalcogenides are being explored extensively as light absorbers because of their low cost and good optoelectronic properties. Sb₂(S, Se)₃ has a tunable bandgap between 1.1 and 1.8 eV, which is ideal for an excellent solar cell. MoS₂ is used as a hole transport layer to evaluate Sb₂(S, Se)_3-based photovoltaic structure. Various parameters of an absorber layer and hole transport layer, such as the thickness, trap density, and acceptor density, have been varied to check the impact on the overall performance of a photovoltaic cell. Furthermore, a work function for back contact is varied to study the impact on the device's efficiency with the help of I–V characteristics. Through careful optimization, the maximum efficiency of 25.67% (Voc = 0.95 V, Jsc = 35.32 mA/cm², and FF = 75.96%) is obtained. The modeling of the solar structure is numerically analyzed by SCAPS-1D software. Our results can be used to improve the efficiency of Sb₂(S, Se)₃-based photovoltaics in practice.