Rotation of the conduction band valleys in AlAS due to XX-XY mixing

Im Hyunsik, P. C. Klipstein, R. Grey, G. Hill

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Abstract

We report resonant magnetotunneling measurements of the energy dispersion near the third X symmetry subband edge in 60 and 70 Å thick AlAs quantum wells with GaAs barriers, grown along z = [001]. An elliptical constant energy surface is observed, oriented parallel to either [110] or [1̄10]. This rotation of 45° with respect to the bulk AlAs Fermi surface is explained by interface induced XX-XY mixing. Our results provide new insight into both γ-XZ and XX-XY mixing, showing conclusively that states with both X1 and X3 symmetry contribute. This contrasts with several recent theoretical studies in which the X1 contribution is zero.

Original languageEnglish
Pages (from-to)3693-3696
Number of pages4
JournalPhysical Review Letters
Volume83
Issue number18
DOIs
StatePublished - 1 Jan 1999
Externally publishedYes

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