Room temperature transparent ferromagnetism in 200 keV Ni2+ ion implanted pulsed laser deposition grown ZnO/sapphire film

B. Pandey; S. Ghosh; P. Srivastava; P. Kumar; D. Kanjilal; S. Zhou; H. Schmidt

doi:10.1063/1.3284091

Room temperature transparent ferromagnetism in 200 keV Ni²⁺ ion implanted pulsed laser deposition grown ZnO/sapphire film

B. Pandey, S. Ghosh, P. Srivastava, P. Kumar, D. Kanjilal, S. Zhou, H. Schmidt

Research output: Contribution to journal › Article › peer-review

31 Scopus citations

Abstract

Intrinsic ferromagnetism at room temperature has been observed in ZnO/sapphire films by implantation of 200 keV Ni²⁺ ions with fluences 6× 10¹⁵, 8× 10¹⁵, 1× 10¹⁶, and 2× 10¹⁶ ions/ cm². Crystalline phases are identified by glancing angle x-ray diffraction, which shows no extra phase in the implanted films. Highest saturation magnetization (M_s) is observed in the film implanted with the fluence of 8× 10¹⁵ ions/ cm² as examined by superconducting quantum interference device magnetometry. This film has almost 80% transmittance across visible wavelength range and hence a potential candidate of transparent ferromagnetic semiconductor. Defectlike oxygen vacancies in the films are studied by x-ray photoelectron spectroscopy. Ferromagnetism of the films is explained on the basis of bound magnetic polaron model.

Original language	English
Article number	023901
Journal	Journal of Applied Physics
Volume	107
Issue number	2
DOIs	https://doi.org/10.1063/1.3284091
State	Published - 2010
Externally published	Yes

Bibliographical note

Funding Information:
The authors are grateful to Department of Physics, IIT Delhi, LEIBF group IUAC, New Delhi and FZD, Dresden for providing experimental support. We also acknowledge some financial support provided by DST and UGC, New Delhi. One of us (B.P.) thanks Dr. R. Singh of IITD and Semiconductor Physics Group, Leipzig University, Germany for providing ZnO/sapphire films.

Funding

The authors are grateful to Department of Physics, IIT Delhi, LEIBF group IUAC, New Delhi and FZD, Dresden for providing experimental support. We also acknowledge some financial support provided by DST and UGC, New Delhi. One of us (B.P.) thanks Dr. R. Singh of IITD and Semiconductor Physics Group, Leipzig University, Germany for providing ZnO/sapphire films.

Funders	Funder number
Department of Science and Technology, Ministry of Science and Technology, India
University Grants Committee

Access to Document

10.1063/1.3284091

Cite this

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title = "Room temperature transparent ferromagnetism in 200 keV Ni2+ ion implanted pulsed laser deposition grown ZnO/sapphire film",

abstract = "Intrinsic ferromagnetism at room temperature has been observed in ZnO/sapphire films by implantation of 200 keV Ni2+ ions with fluences 6× 1015, 8× 1015, 1× 1016, and 2× 1016 ions/ cm2. Crystalline phases are identified by glancing angle x-ray diffraction, which shows no extra phase in the implanted films. Highest saturation magnetization (Ms) is observed in the film implanted with the fluence of 8× 1015 ions/ cm2 as examined by superconducting quantum interference device magnetometry. This film has almost 80% transmittance across visible wavelength range and hence a potential candidate of transparent ferromagnetic semiconductor. Defectlike oxygen vacancies in the films are studied by x-ray photoelectron spectroscopy. Ferromagnetism of the films is explained on the basis of bound magnetic polaron model.",

author = "B. Pandey and S. Ghosh and P. Srivastava and P. Kumar and D. Kanjilal and S. Zhou and H. Schmidt",

note = "Funding Information: The authors are grateful to Department of Physics, IIT Delhi, LEIBF group IUAC, New Delhi and FZD, Dresden for providing experimental support. We also acknowledge some financial support provided by DST and UGC, New Delhi. One of us (B.P.) thanks Dr. R. Singh of IITD and Semiconductor Physics Group, Leipzig University, Germany for providing ZnO/sapphire films.",

year = "2010",

doi = "10.1063/1.3284091",

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journal = "Journal of Applied Physics",

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T1 - Room temperature transparent ferromagnetism in 200 keV Ni2+ ion implanted pulsed laser deposition grown ZnO/sapphire film

AU - Pandey, B.

AU - Ghosh, S.

AU - Srivastava, P.

AU - Kumar, P.

AU - Kanjilal, D.

AU - Zhou, S.

AU - Schmidt, H.

N1 - Funding Information: The authors are grateful to Department of Physics, IIT Delhi, LEIBF group IUAC, New Delhi and FZD, Dresden for providing experimental support. We also acknowledge some financial support provided by DST and UGC, New Delhi. One of us (B.P.) thanks Dr. R. Singh of IITD and Semiconductor Physics Group, Leipzig University, Germany for providing ZnO/sapphire films.

PY - 2010

Y1 - 2010

N2 - Intrinsic ferromagnetism at room temperature has been observed in ZnO/sapphire films by implantation of 200 keV Ni2+ ions with fluences 6× 1015, 8× 1015, 1× 1016, and 2× 1016 ions/ cm2. Crystalline phases are identified by glancing angle x-ray diffraction, which shows no extra phase in the implanted films. Highest saturation magnetization (Ms) is observed in the film implanted with the fluence of 8× 1015 ions/ cm2 as examined by superconducting quantum interference device magnetometry. This film has almost 80% transmittance across visible wavelength range and hence a potential candidate of transparent ferromagnetic semiconductor. Defectlike oxygen vacancies in the films are studied by x-ray photoelectron spectroscopy. Ferromagnetism of the films is explained on the basis of bound magnetic polaron model.

AB - Intrinsic ferromagnetism at room temperature has been observed in ZnO/sapphire films by implantation of 200 keV Ni2+ ions with fluences 6× 1015, 8× 1015, 1× 1016, and 2× 1016 ions/ cm2. Crystalline phases are identified by glancing angle x-ray diffraction, which shows no extra phase in the implanted films. Highest saturation magnetization (Ms) is observed in the film implanted with the fluence of 8× 1015 ions/ cm2 as examined by superconducting quantum interference device magnetometry. This film has almost 80% transmittance across visible wavelength range and hence a potential candidate of transparent ferromagnetic semiconductor. Defectlike oxygen vacancies in the films are studied by x-ray photoelectron spectroscopy. Ferromagnetism of the films is explained on the basis of bound magnetic polaron model.

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