Abstract
Semionic behaviour is demonstrated in certain ternary and multinary semiconductors, by following the eifects of application of external electric fields at ambient temperature. We find that this can lead to stable, local changes in their microchemical composition and, via resulting changes in carrier concentration, in their electronic properties. Thus, actual device structures are embedded in the material. We summarize these results and our understanding of the mechanisms involved.
| Original language | English |
|---|---|
| Pages (from-to) | 660-661 |
| Number of pages | 2 |
| Journal | Japanese Journal of Applied Physics |
| Volume | 32 |
| Issue number | S3 |
| DOIs | |
| State | Published - Jan 1993 |
| Externally published | Yes |
Keywords
- (Cd
- CulnSe
- Defects
- Doping
- Hg)Te
- Transistor
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