Room Temperature Tailoring of Electrical Properties of Ternary and Multinary Chalcogenide Semiconductors

David Cahen; Leonid Chernyak; Konstantin Gartsman; Igor Lyubomirsky; Robert Triboulet

doi:10.7567/jjaps.32s3.660

Room Temperature Tailoring of Electrical Properties of Ternary and Multinary Chalcogenide Semiconductors

David Cahen, Leonid Chernyak, Konstantin Gartsman, Igor Lyubomirsky, Robert Triboulet

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Semionic behaviour is demonstrated in certain ternary and multinary semiconductors, by following the eifects of application of external electric fields at ambient temperature. We find that this can lead to stable, local changes in their microchemical composition and, via resulting changes in carrier concentration, in their electronic properties. Thus, actual device structures are embedded in the material. We summarize these results and our understanding of the mechanisms involved.

Original language	English
Pages (from-to)	660-661
Number of pages	2
Journal	Japanese Journal of Applied Physics
Volume	32
Issue number	S3
DOIs	https://doi.org/10.7567/jjaps.32s3.660
State	Published - Jan 1993
Externally published	Yes

Keywords

(Cd
CulnSe
Defects
Doping
Hg)Te
Transistor

Access to Document

10.7567/jjaps.32s3.660

Cite this

@article{a3ecbce49d884274b7493adb4cd5d308,

title = "Room Temperature Tailoring of Electrical Properties of Ternary and Multinary Chalcogenide Semiconductors",

abstract = "Semionic behaviour is demonstrated in certain ternary and multinary semiconductors, by following the eifects of application of external electric fields at ambient temperature. We find that this can lead to stable, local changes in their microchemical composition and, via resulting changes in carrier concentration, in their electronic properties. Thus, actual device structures are embedded in the material. We summarize these results and our understanding of the mechanisms involved.",

keywords = "(Cd, CulnSe, Defects, Doping, Hg)Te, Transistor",

author = "David Cahen and Leonid Chernyak and Konstantin Gartsman and Igor Lyubomirsky and Robert Triboulet",

year = "1993",

month = jan,

doi = "10.7567/jjaps.32s3.660",

language = "אנגלית",

volume = "32",

pages = "660--661",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "S3",

}

TY - JOUR

T1 - Room Temperature Tailoring of Electrical Properties of Ternary and Multinary Chalcogenide Semiconductors

AU - Cahen, David

AU - Chernyak, Leonid

AU - Gartsman, Konstantin

AU - Lyubomirsky, Igor

AU - Triboulet, Robert

PY - 1993/1

Y1 - 1993/1

N2 - Semionic behaviour is demonstrated in certain ternary and multinary semiconductors, by following the eifects of application of external electric fields at ambient temperature. We find that this can lead to stable, local changes in their microchemical composition and, via resulting changes in carrier concentration, in their electronic properties. Thus, actual device structures are embedded in the material. We summarize these results and our understanding of the mechanisms involved.

AB - Semionic behaviour is demonstrated in certain ternary and multinary semiconductors, by following the eifects of application of external electric fields at ambient temperature. We find that this can lead to stable, local changes in their microchemical composition and, via resulting changes in carrier concentration, in their electronic properties. Thus, actual device structures are embedded in the material. We summarize these results and our understanding of the mechanisms involved.

KW - (Cd

KW - CulnSe

KW - Defects

KW - Doping

KW - Hg)Te

KW - Transistor

UR - http://www.scopus.com/inward/record.url?scp=0006918774&partnerID=8YFLogxK

U2 - 10.7567/jjaps.32s3.660

DO - 10.7567/jjaps.32s3.660

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

AN - SCOPUS:0006918774

SN - 0021-4922

VL - 32

SP - 660

EP - 661

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - S3

ER -

Room Temperature Tailoring of Electrical Properties of Ternary and Multinary Chalcogenide Semiconductors

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this