Abstract
The mechanisms that limit the temperature performance of GaAs/Al0.15GaAs-based terahertz quantum cascade lasers (THz-QCLs) have been identified as thermally activated LO-phonon scattering and leakage of charge carriers into the continuum. Consequently, the combination of highly diagonal optical transition and higher barriers should significantly reduce the adverse effects of both mechanisms and lead to improved temperature performance. Here, we study the temperature performance of highly diagonal THz-QCLs with high barriers. Our analysis uncovers an additional leakage channel which is the thermal excitation of carriers into bounded higher energy levels, rather than the escape into the continuum. Based on this understanding, we have designed a structure with an increased intersubband spacing between the upper lasing level and excited states in a highly diagonal THz-QCL, which exhibits negative differential resistance even at room temperature. This result is a strong evidence for the effective suppression of the aforementioned leakage channel.
Original language | English |
---|---|
Article number | 081102 |
Journal | Applied Physics Letters |
Volume | 109 |
Issue number | 8 |
DOIs | |
State | Published - 22 Aug 2016 |
Externally published | Yes |
Bibliographical note
Publisher Copyright:© 2016 Author(s).
Funding
This work was supported by NSF and Israel MoD, and also performed at the Center for Integrated Nanotechnologies, a U.S. Department of Energy, Office of Basic Energy Sciences user facility. Sandia National Laboratories is a multi-program laboratory operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy's National Nuclear Security Administration under Contract No. DE-AC04-94AL85000.
Funders | Funder number |
---|---|
Israel MOD | |
Office of Basic Energy Sciences | |
National Science Foundation | |
U.S. Department of Energy | |
Lockheed Martin Corporation | |
National Nuclear Security Administration | DE-AC04-94AL85000 |