TY - JOUR
T1 - Room temperature, local tailoring of electronic properties of Hg 0.3Cd0.7Te by applying an external electric field
AU - Gartsman, Konstantin
AU - Chernyak, Leonid
AU - Gilet, Jean Marc
AU - Cahen, David
AU - Triboulet, Robert
PY - 1992
Y1 - 1992
N2 - Electronic properties of initially homogeneous (Hg,Cd)Te samples have been modified on a local scale, in a stable manner at room temperature, by reverse biasing of small-area Schottky contacts on them. This was shown, after the bias voltage had been lifted, by current-voltage measurements and by electron beam-induced current scans. The creation of a clear diodelike structure in the vicinity of the Schottky contact on a scale of about hundred μm could be explained by electromigration of electrically active ions and/or by generation of point and line defects. The latter type of defect was revealed by chemical etch after application of the field.
AB - Electronic properties of initially homogeneous (Hg,Cd)Te samples have been modified on a local scale, in a stable manner at room temperature, by reverse biasing of small-area Schottky contacts on them. This was shown, after the bias voltage had been lifted, by current-voltage measurements and by electron beam-induced current scans. The creation of a clear diodelike structure in the vicinity of the Schottky contact on a scale of about hundred μm could be explained by electromigration of electrically active ions and/or by generation of point and line defects. The latter type of defect was revealed by chemical etch after application of the field.
UR - http://www.scopus.com/inward/record.url?scp=36449005497&partnerID=8YFLogxK
U2 - 10.1063/1.108459
DO - 10.1063/1.108459
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AN - SCOPUS:36449005497
SN - 0003-6951
VL - 61
SP - 2428
EP - 2430
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 20
ER -