Room temperature growth of indium tin oxide thin films by ultraviolet-assisted pulsed laser deposition

V. Craciun; D. Craciun; Z. Chen; J. Hwang; R. K. Singh

doi:10.1016/s0169-4332(00)00832-1

Room temperature growth of indium tin oxide thin films by ultraviolet-assisted pulsed laser deposition

V. Craciun
, D. Craciun
, Z. Chen
, J. Hwang
, R. K. Singh

University of Florida
National Institute for Laser, Plasma and Radiation Physics

Research output: Contribution to journal › Article › peer-review

33 Scopus citations

Abstract

Thin indium tin oxide (ITO) films were grown at room temperature on (100) Si and Corning glass by an in situ ultraviolet-assisted pulsed laser deposition (UVPLD) technique. The oxygen pressure during the growth markedly influenced the properties of the films. For oxygen pressure below 1 mTorr, films exhibited very low optical transmittance and high resistivity. The resistivity decreased when using higher oxygen pressures while the optical transmittance increased. For a target-substrate distance of 10.5 cm, the optimum oxygen pressure was found to be around 10 mTorr. For higher oxygen pressures, the optical transmittance was higher but a rapid increase of the electrical resistivity was noticed. X-ray photoelectron spectroscopy showed that ITO films grown at 10 mTorr were fully oxidized. All grown films were amorphous regardless of the oxygen pressure used.

Original language	English
Pages (from-to)	118-122
Number of pages	5
Journal	Applied Surface Science
Volume	168
Issue number	1-4
DOIs	https://doi.org/10.1016/s0169-4332(00)00832-1
State	Published - 15 Dec 2000
Externally published	Yes

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title = "Room temperature growth of indium tin oxide thin films by ultraviolet-assisted pulsed laser deposition",

abstract = "Thin indium tin oxide (ITO) films were grown at room temperature on (100) Si and Corning glass by an in situ ultraviolet-assisted pulsed laser deposition (UVPLD) technique. The oxygen pressure during the growth markedly influenced the properties of the films. For oxygen pressure below 1 mTorr, films exhibited very low optical transmittance and high resistivity. The resistivity decreased when using higher oxygen pressures while the optical transmittance increased. For a target-substrate distance of 10.5 cm, the optimum oxygen pressure was found to be around 10 mTorr. For higher oxygen pressures, the optical transmittance was higher but a rapid increase of the electrical resistivity was noticed. X-ray photoelectron spectroscopy showed that ITO films grown at 10 mTorr were fully oxidized. All grown films were amorphous regardless of the oxygen pressure used.",

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T1 - Room temperature growth of indium tin oxide thin films by ultraviolet-assisted pulsed laser deposition

AU - Craciun, V.

AU - Craciun, D.

AU - Chen, Z.

AU - Hwang, J.

AU - Singh, R. K.

PY - 2000/12/15

Y1 - 2000/12/15

N2 - Thin indium tin oxide (ITO) films were grown at room temperature on (100) Si and Corning glass by an in situ ultraviolet-assisted pulsed laser deposition (UVPLD) technique. The oxygen pressure during the growth markedly influenced the properties of the films. For oxygen pressure below 1 mTorr, films exhibited very low optical transmittance and high resistivity. The resistivity decreased when using higher oxygen pressures while the optical transmittance increased. For a target-substrate distance of 10.5 cm, the optimum oxygen pressure was found to be around 10 mTorr. For higher oxygen pressures, the optical transmittance was higher but a rapid increase of the electrical resistivity was noticed. X-ray photoelectron spectroscopy showed that ITO films grown at 10 mTorr were fully oxidized. All grown films were amorphous regardless of the oxygen pressure used.

AB - Thin indium tin oxide (ITO) films were grown at room temperature on (100) Si and Corning glass by an in situ ultraviolet-assisted pulsed laser deposition (UVPLD) technique. The oxygen pressure during the growth markedly influenced the properties of the films. For oxygen pressure below 1 mTorr, films exhibited very low optical transmittance and high resistivity. The resistivity decreased when using higher oxygen pressures while the optical transmittance increased. For a target-substrate distance of 10.5 cm, the optimum oxygen pressure was found to be around 10 mTorr. For higher oxygen pressures, the optical transmittance was higher but a rapid increase of the electrical resistivity was noticed. X-ray photoelectron spectroscopy showed that ITO films grown at 10 mTorr were fully oxidized. All grown films were amorphous regardless of the oxygen pressure used.

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Room temperature growth of indium tin oxide thin films by ultraviolet-assisted pulsed laser deposition

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