Room temperature growth of indium tin oxide thin films by ultraviolet-assisted pulsed laser deposition

V. Craciun, D. Craciun, Z. Chen, J. Hwang, R. K. Singh

Research output: Contribution to journalArticlepeer-review

32 Scopus citations

Abstract

Thin indium tin oxide (ITO) films were grown at room temperature on (100) Si and Corning glass by an in situ ultraviolet-assisted pulsed laser deposition (UVPLD) technique. The oxygen pressure during the growth markedly influenced the properties of the films. For oxygen pressure below 1 mTorr, films exhibited very low optical transmittance and high resistivity. The resistivity decreased when using higher oxygen pressures while the optical transmittance increased. For a target-substrate distance of 10.5 cm, the optimum oxygen pressure was found to be around 10 mTorr. For higher oxygen pressures, the optical transmittance was higher but a rapid increase of the electrical resistivity was noticed. X-ray photoelectron spectroscopy showed that ITO films grown at 10 mTorr were fully oxidized. All grown films were amorphous regardless of the oxygen pressure used.

Original languageEnglish
Pages (from-to)118-122
Number of pages5
JournalApplied Surface Science
Volume168
Issue number1-4
DOIs
StatePublished - 15 Dec 2000
Externally publishedYes

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