TY - JOUR
T1 - Room temperature growth of indium tin oxide thin films by ultraviolet-assisted pulsed laser deposition
AU - Craciun, V.
AU - Craciun, D.
AU - Chen, Z.
AU - Hwang, J.
AU - Singh, R. K.
PY - 2000/12/15
Y1 - 2000/12/15
N2 - Thin indium tin oxide (ITO) films were grown at room temperature on (100) Si and Corning glass by an in situ ultraviolet-assisted pulsed laser deposition (UVPLD) technique. The oxygen pressure during the growth markedly influenced the properties of the films. For oxygen pressure below 1 mTorr, films exhibited very low optical transmittance and high resistivity. The resistivity decreased when using higher oxygen pressures while the optical transmittance increased. For a target-substrate distance of 10.5 cm, the optimum oxygen pressure was found to be around 10 mTorr. For higher oxygen pressures, the optical transmittance was higher but a rapid increase of the electrical resistivity was noticed. X-ray photoelectron spectroscopy showed that ITO films grown at 10 mTorr were fully oxidized. All grown films were amorphous regardless of the oxygen pressure used.
AB - Thin indium tin oxide (ITO) films were grown at room temperature on (100) Si and Corning glass by an in situ ultraviolet-assisted pulsed laser deposition (UVPLD) technique. The oxygen pressure during the growth markedly influenced the properties of the films. For oxygen pressure below 1 mTorr, films exhibited very low optical transmittance and high resistivity. The resistivity decreased when using higher oxygen pressures while the optical transmittance increased. For a target-substrate distance of 10.5 cm, the optimum oxygen pressure was found to be around 10 mTorr. For higher oxygen pressures, the optical transmittance was higher but a rapid increase of the electrical resistivity was noticed. X-ray photoelectron spectroscopy showed that ITO films grown at 10 mTorr were fully oxidized. All grown films were amorphous regardless of the oxygen pressure used.
UR - http://www.scopus.com/inward/record.url?scp=0034512597&partnerID=8YFLogxK
U2 - 10.1016/s0169-4332(00)00832-1
DO - 10.1016/s0169-4332(00)00832-1
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AN - SCOPUS:0034512597
SN - 0169-4332
VL - 168
SP - 118
EP - 122
JO - Applied Surface Science
JF - Applied Surface Science
IS - 1-4
ER -