Role of Se vacancies on Shubnikov-de Haas oscillations in Bi2Se3: A combined magneto-resistance and positron annihilation study

T. R. Devidas; E. P. Amaladass; Shilpam Sharma; R. Rajaraman; D. Sornadurai; N. Subramanian; Awadhesh Mani; C. S. Sundar; A. Bharathi

doi:10.1209/0295-5075/108/67008

Role of Se vacancies on Shubnikov-de Haas oscillations in Bi₂Se₃: A combined magneto-resistance and positron annihilation study

T. R. Devidas
, E. P. Amaladass
, Shilpam Sharma
, R. Rajaraman
, D. Sornadurai
, N. Subramanian
, Awadhesh Mani
, C. S. Sundar
, A. Bharathi

Indira Gandhi Centre for Atomic Research

Research output: Contribution to journal › Article › peer-review

31 Scopus citations

Abstract

Magneto-resistance measurements coupled with positron lifetime measurements, to characterize the vacancy-type defects, have been carried out on the topological insulator (TI) system Bi₂Se₃ of varying Se/Bi ratio. Pronounced Shubnikov-de Haas (SdH) oscillations are seen in nominal Bi₂Se_3.1 crystals for measurements performed in magnetic fields up to 15 T in the 4 K-10 K temperature range, with field applied perpendicularly to the (001) plane of the crystal. The quantum oscillations, characteristic of 2D electronic structure, are seen only in the crystals that have a lower concentration of Se vacancies, as inferred from positron annihilation spectroscopy.

Original language	English
Article number	67008
Journal	EPL
Volume	108
Issue number	6
DOIs	https://doi.org/10.1209/0295-5075/108/67008
State	Published - 1 Dec 2014
Externally published	Yes

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© CopyrightEPLA, 2014.

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title = "Role of Se vacancies on Shubnikov-de Haas oscillations in Bi2Se3: A combined magneto-resistance and positron annihilation study",

abstract = "Magneto-resistance measurements coupled with positron lifetime measurements, to characterize the vacancy-type defects, have been carried out on the topological insulator (TI) system Bi2Se3 of varying Se/Bi ratio. Pronounced Shubnikov-de Haas (SdH) oscillations are seen in nominal Bi2Se3.1 crystals for measurements performed in magnetic fields up to 15 T in the 4 K-10 K temperature range, with field applied perpendicularly to the (001) plane of the crystal. The quantum oscillations, characteristic of 2D electronic structure, are seen only in the crystals that have a lower concentration of Se vacancies, as inferred from positron annihilation spectroscopy.",

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T2 - A combined magneto-resistance and positron annihilation study

AU - Devidas, T. R.

AU - Amaladass, E. P.

AU - Sharma, Shilpam

AU - Rajaraman, R.

AU - Sornadurai, D.

AU - Subramanian, N.

AU - Mani, Awadhesh

AU - Sundar, C. S.

AU - Bharathi, A.

PY - 2014/12/1

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AB - Magneto-resistance measurements coupled with positron lifetime measurements, to characterize the vacancy-type defects, have been carried out on the topological insulator (TI) system Bi2Se3 of varying Se/Bi ratio. Pronounced Shubnikov-de Haas (SdH) oscillations are seen in nominal Bi2Se3.1 crystals for measurements performed in magnetic fields up to 15 T in the 4 K-10 K temperature range, with field applied perpendicularly to the (001) plane of the crystal. The quantum oscillations, characteristic of 2D electronic structure, are seen only in the crystals that have a lower concentration of Se vacancies, as inferred from positron annihilation spectroscopy.

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Role of Se vacancies on Shubnikov-de Haas oscillations in Bi₂Se₃: A combined magneto-resistance and positron annihilation study

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