RF-DC Multiplier for RF Energy Harvester based on 32nm and TFET technologies

Lionel Trojman; David Rivadeneira; Marco Villegas; Eliana Acurio; Marco Lanuzza; Luis Miguel Procel; Ramiro Taco

doi:10.1109/LASCAS51355.2021.9459129

RF-DC Multiplier for RF Energy Harvester based on 32nm and TFET technologies

Lionel Trojman, David Rivadeneira, Marco Villegas, Eliana Acurio, Marco Lanuzza, Luis Miguel Procel, Ramiro Taco

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

In this work, we are studying the effect of the technology scaling for different full-wave rectifier topologies using the Cross-Coupled Differential Drive (CCDD) strategy to implement a multiplier. For a conventional CCDD scaling from 90nm to 32nm, the PCE and VCE are maintained the same while a large degradation of the dynamic range and sensitivity are observed. This effect could be slightly limited by using a self-body bias CCDD topology. However, the use of TFET enables to avoid this degradation and provide a large VCE and output voltage for input voltage lower than 300mV. To extend this VCE for input voltage>300mV, we use a CCDD topology increasing the loading drive capability. Interestingly, this resulted not only on increasing the output voltage for large Vin but also demonstrated larger PCE than expected for this topology.

Original language	English
Title of host publication	2021 IEEE 12th Latin American Symposium on Circuits and Systems, LASCAS 2021
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781728176703
DOIs	https://doi.org/10.1109/LASCAS51355.2021.9459129
State	Published - 21 Feb 2021
Externally published	Yes
Event	12th IEEE Latin American Symposium on Circuits and Systems, LASCAS 2021 - Arequipa, Peru Duration: 22 Feb 2021 → 25 Feb 2021

Publication series

Name	2021 IEEE 12th Latin American Symposium on Circuits and Systems, LASCAS 2021

Conference

Conference	12th IEEE Latin American Symposium on Circuits and Systems, LASCAS 2021
Country/Territory	Peru
City	Arequipa
Period	22/02/21 → 25/02/21

Bibliographical note

Publisher Copyright:
© 2021 IEEE.

Keywords

32nm
CCDD
Multiplier
PCE
TFET
VCE
full wave rectifier

Access to Document

10.1109/LASCAS51355.2021.9459129

Cite this

Trojman, L., Rivadeneira, D., Villegas, M., Acurio, E., Lanuzza, M., Procel, L. M., & Taco, R. (2021). RF-DC Multiplier for RF Energy Harvester based on 32nm and TFET technologies. In 2021 IEEE 12th Latin American Symposium on Circuits and Systems, LASCAS 2021 Article 9459129 (2021 IEEE 12th Latin American Symposium on Circuits and Systems, LASCAS 2021). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/LASCAS51355.2021.9459129

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abstract = "In this work, we are studying the effect of the technology scaling for different full-wave rectifier topologies using the Cross-Coupled Differential Drive (CCDD) strategy to implement a multiplier. For a conventional CCDD scaling from 90nm to 32nm, the PCE and VCE are maintained the same while a large degradation of the dynamic range and sensitivity are observed. This effect could be slightly limited by using a self-body bias CCDD topology. However, the use of TFET enables to avoid this degradation and provide a large VCE and output voltage for input voltage lower than 300mV. To extend this VCE for input voltage>300mV, we use a CCDD topology increasing the loading drive capability. Interestingly, this resulted not only on increasing the output voltage for large Vin but also demonstrated larger PCE than expected for this topology.",

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author = "Lionel Trojman and David Rivadeneira and Marco Villegas and Eliana Acurio and Marco Lanuzza and Procel, {Luis Miguel} and Ramiro Taco",

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Trojman, L, Rivadeneira, D, Villegas, M, Acurio, E, Lanuzza, M, Procel, LM & Taco, R 2021, RF-DC Multiplier for RF Energy Harvester based on 32nm and TFET technologies. in 2021 IEEE 12th Latin American Symposium on Circuits and Systems, LASCAS 2021., 9459129, 2021 IEEE 12th Latin American Symposium on Circuits and Systems, LASCAS 2021, Institute of Electrical and Electronics Engineers Inc., 12th IEEE Latin American Symposium on Circuits and Systems, LASCAS 2021, Arequipa, Peru, 22/02/21. https://doi.org/10.1109/LASCAS51355.2021.9459129

RF-DC Multiplier for RF Energy Harvester based on 32nm and TFET technologies. / Trojman, Lionel; Rivadeneira, David; Villegas, Marco et al.
2021 IEEE 12th Latin American Symposium on Circuits and Systems, LASCAS 2021. Institute of Electrical and Electronics Engineers Inc., 2021. 9459129 (2021 IEEE 12th Latin American Symposium on Circuits and Systems, LASCAS 2021).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Villegas, Marco

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AU - Lanuzza, Marco

AU - Procel, Luis Miguel

AU - Taco, Ramiro

PY - 2021/2/21

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N2 - In this work, we are studying the effect of the technology scaling for different full-wave rectifier topologies using the Cross-Coupled Differential Drive (CCDD) strategy to implement a multiplier. For a conventional CCDD scaling from 90nm to 32nm, the PCE and VCE are maintained the same while a large degradation of the dynamic range and sensitivity are observed. This effect could be slightly limited by using a self-body bias CCDD topology. However, the use of TFET enables to avoid this degradation and provide a large VCE and output voltage for input voltage lower than 300mV. To extend this VCE for input voltage>300mV, we use a CCDD topology increasing the loading drive capability. Interestingly, this resulted not only on increasing the output voltage for large Vin but also demonstrated larger PCE than expected for this topology.

AB - In this work, we are studying the effect of the technology scaling for different full-wave rectifier topologies using the Cross-Coupled Differential Drive (CCDD) strategy to implement a multiplier. For a conventional CCDD scaling from 90nm to 32nm, the PCE and VCE are maintained the same while a large degradation of the dynamic range and sensitivity are observed. This effect could be slightly limited by using a self-body bias CCDD topology. However, the use of TFET enables to avoid this degradation and provide a large VCE and output voltage for input voltage lower than 300mV. To extend this VCE for input voltage>300mV, we use a CCDD topology increasing the loading drive capability. Interestingly, this resulted not only on increasing the output voltage for large Vin but also demonstrated larger PCE than expected for this topology.

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Trojman L, Rivadeneira D, Villegas M, Acurio E, Lanuzza M, Procel LM et al. RF-DC Multiplier for RF Energy Harvester based on 32nm and TFET technologies. In 2021 IEEE 12th Latin American Symposium on Circuits and Systems, LASCAS 2021. Institute of Electrical and Electronics Engineers Inc. 2021. 9459129. (2021 IEEE 12th Latin American Symposium on Circuits and Systems, LASCAS 2021). doi: 10.1109/LASCAS51355.2021.9459129

RF-DC Multiplier for RF Energy Harvester based on 32nm and TFET technologies

Abstract

Publication series

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Bibliographical note

Keywords

Access to Document

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