TY - JOUR
T1 - Reviewing two-dimensional (2D) transition metal di-tellurides (TMDTs)
T2 - Properties, synthesis, and challenges in chemical vapour deposition techniques, and their optoelectronic applications
AU - Konar, Rajashree
AU - Maiti, Sandipan
N1 - Publisher Copyright:
© 2024 Elsevier Ltd
PY - 2025/2
Y1 - 2025/2
N2 - Transition metal di-tellurides (TMDTs) are a fascinating class of 2D materials with numerous polytypes and properties that have recently emerged as a focal point in the electronics industry. TMDTs have found significant applications in photodetectors, light-emitting diodes, and field-effect transistors (FETs). In this review, we focus on an in-depth understanding of the crystallographic aspects of TMDTs, including various phase transitions and electronic, topological, thermoelectric, and magnetic properties. We delve into their controlled chemical vapor deposition (CVD) growth; a synthesis route that poses considerable challenges. Successful development of TMDTs requires proper nucleation and orientation through improved CVD strategies such as precursor or substrate modifications, process optimization, and bandgap engineering, which are explained here. Furthermore, this review addresses the current challenges of controlled CVD growth of 2D TMDTs and systematically categorizes the impact of defects, layer numbers, and orientation on TMDT quality. Potential perspectives are discussed that can inspire better growth parameters for future advancements. Finally, the review covers relevant examples, non-van der Waals (nvdW) solids, optoelectronics, and photodetector applications based on 2D TMDTs.
AB - Transition metal di-tellurides (TMDTs) are a fascinating class of 2D materials with numerous polytypes and properties that have recently emerged as a focal point in the electronics industry. TMDTs have found significant applications in photodetectors, light-emitting diodes, and field-effect transistors (FETs). In this review, we focus on an in-depth understanding of the crystallographic aspects of TMDTs, including various phase transitions and electronic, topological, thermoelectric, and magnetic properties. We delve into their controlled chemical vapor deposition (CVD) growth; a synthesis route that poses considerable challenges. Successful development of TMDTs requires proper nucleation and orientation through improved CVD strategies such as precursor or substrate modifications, process optimization, and bandgap engineering, which are explained here. Furthermore, this review addresses the current challenges of controlled CVD growth of 2D TMDTs and systematically categorizes the impact of defects, layer numbers, and orientation on TMDT quality. Potential perspectives are discussed that can inspire better growth parameters for future advancements. Finally, the review covers relevant examples, non-van der Waals (nvdW) solids, optoelectronics, and photodetector applications based on 2D TMDTs.
KW - 2D materials
KW - Chemical vapor deposition (CVD)
KW - Non-van der Waals (nvdW) solids
KW - Optoelectronic devices
KW - Photodetectors
KW - Synthesis, crystallography
KW - Transition metal di-tellurides (TMDTs)
UR - http://www.scopus.com/inward/record.url?scp=85208546426&partnerID=8YFLogxK
U2 - 10.1016/j.mssp.2024.109095
DO - 10.1016/j.mssp.2024.109095
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AN - SCOPUS:85208546426
SN - 1369-8001
VL - 186
JO - Materials Science in Semiconductor Processing
JF - Materials Science in Semiconductor Processing
M1 - 109095
ER -