Abstract
The fabrication of nanoelectronic and nanophotonic devices based on embedded quantum structures has become feasible over the last decades, and the field is continuously improving. Quantum measurements describing evolving configurations are required as part of the optical characterization and performances study of these devices. To ensure accuracy, it is necessary to determine a reliable evaluation of the expected quantum effects relevant to both stationary and time-dependent measurements. Based on a case study of a quantum well embedded in a nanoelectronic MOSFET device as the gate-recessed channel (GRC), a set of possible quantum measurements that can serve as a basis to similar applications of the rules on additional devices is presented and analyzed
| Original language | American English |
|---|---|
| Article number | 10643272 |
| Pages (from-to) | 1-9 |
| Number of pages | 9 |
| Journal | IEEE Journal of Selected Topics in Quantum Electronics |
| Volume | PP |
| Issue number | 99 |
| DOIs | |
| State | Published - 21 Aug 2024 |
Bibliographical note
Publisher Copyright:IEEE
Keywords
- Transistors
- Nanoscale devices
- MOSFET
- Semiconductor device measurement
- Optical variables measurement
- Optical devices
- Logic gates