TY - GEN
T1 - Responsivity of gated photodiode in SOS technology
AU - Fish, Alexander
AU - Yadid-Pecht, Orly
AU - Culurciello, Eugenio
PY - 2007
Y1 - 2007
N2 - We report on the responsivity of Silicon-on-Sapphire (SOS) gated photodiode. A test chip, consisting of 1024 photodetectors, connected in parallel, was fabricated in a Peregrine's 0.5μ SOS technology and successfully tested by direct photocurrent measurements. We include measurements from a test chip, showing photocurrent dependence on reverse applied voltage, incident illumination intensities and light wavelengths. Dark current measurements are also reported. The measurement results are compared with recently presented PIN photodiodes showing that the gated photodiode can be an appropriate candidate for further implementation in image sensor arrays.
AB - We report on the responsivity of Silicon-on-Sapphire (SOS) gated photodiode. A test chip, consisting of 1024 photodetectors, connected in parallel, was fabricated in a Peregrine's 0.5μ SOS technology and successfully tested by direct photocurrent measurements. We include measurements from a test chip, showing photocurrent dependence on reverse applied voltage, incident illumination intensities and light wavelengths. Dark current measurements are also reported. The measurement results are compared with recently presented PIN photodiodes showing that the gated photodiode can be an appropriate candidate for further implementation in image sensor arrays.
UR - http://www.scopus.com/inward/record.url?scp=48349127928&partnerID=8YFLogxK
U2 - 10.1109/icsens.2007.4388452
DO - 10.1109/icsens.2007.4388452
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AN - SCOPUS:48349127928
SN - 1424412617
SN - 9781424412617
T3 - Proceedings of IEEE Sensors
SP - 527
EP - 530
BT - The 6th IEEE Conference on SENSORS, IEEE SENSORS 2007
T2 - 6th IEEE Conference on SENSORS, IEEE SENSORS 2007
Y2 - 28 October 2007 through 31 October 2007
ER -