Resonant tunneling and interface band mixing of X-Electrons in GaAs/AlAs heterostructures

P. C. Klipstein

doi:10.1002/1521-3951(200101)223:1<87::AID-PSSB87>3.0.CO;2-O

Resonant tunneling and interface band mixing of X-Electrons in GaAs/AlAs heterostructures

P. C. Klipstein

University of Oxford

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Recent research at Oxford is reviewed on resonant tunneling in type II GaAs/AlAs "double barrier" structures. In this work high pressure and high magnetic field, both parallel and perpendicular to the layers, play a key role. Our results include the first determination of the pressure dependence of the transverse effective mass in AlAs, a complete re-evaluation of the shape of the camel's back dispersion, and the first observation of X_x-X_y interface band mixing.

Original language	English
Pages (from-to)	87-96
Number of pages	10
Journal	Physica Status Solidi (B): Basic Research
Volume	223
Issue number	1
DOIs	https://doi.org/10.1002/1521-3951(200101)223:1<87::AID-PSSB87>3.0.CO;2-O
State	Published - Jan 2001
Externally published	Yes

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Resonant tunneling and interface band mixing of X-Electrons in GaAs/AlAs heterostructures

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