TY - JOUR
T1 - Resonant tunneling and interface band mixing of X-Electrons in GaAs/AlAs heterostructures
AU - Klipstein, P. C.
PY - 2001/1
Y1 - 2001/1
N2 - Recent research at Oxford is reviewed on resonant tunneling in type II GaAs/AlAs "double barrier" structures. In this work high pressure and high magnetic field, both parallel and perpendicular to the layers, play a key role. Our results include the first determination of the pressure dependence of the transverse effective mass in AlAs, a complete re-evaluation of the shape of the camel's back dispersion, and the first observation of Xx-Xy interface band mixing.
AB - Recent research at Oxford is reviewed on resonant tunneling in type II GaAs/AlAs "double barrier" structures. In this work high pressure and high magnetic field, both parallel and perpendicular to the layers, play a key role. Our results include the first determination of the pressure dependence of the transverse effective mass in AlAs, a complete re-evaluation of the shape of the camel's back dispersion, and the first observation of Xx-Xy interface band mixing.
UR - http://www.scopus.com/inward/record.url?scp=0035529141&partnerID=8YFLogxK
U2 - 10.1002/1521-3951(200101)223:1<87::AID-PSSB87>3.0.CO;2-O
DO - 10.1002/1521-3951(200101)223:1<87::AID-PSSB87>3.0.CO;2-O
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AN - SCOPUS:0035529141
SN - 0370-1972
VL - 223
SP - 87
EP - 96
JO - Physica Status Solidi (B): Basic Research
JF - Physica Status Solidi (B): Basic Research
IS - 1
ER -