RESISTIVITY OF HEAVILY DOPED AND COMPENSATED GERMANIUM.

The dc resistivity of germanium samples heavily doped with phosphorus (5 multiplied by (times) 10**1**8 cm** minus **3) and compensated with gallium was investigated in a wide range of temperatures. Both impurities were introduced into the melt and an ingot was pulled by the Czochralski method. The absolute resistivity was governed by technological inhomogeneities and varied from sample to sample, but the relative change in the resistivity with temperature was due to physical phenomena associated with the strong compensation. The temperature dependence of the resistivity of the samples cut at right angles to the ingot growth axis was in qualitative agreement with the theoretical calculations based on the assumption of a random distribution of impurities. The temperature dependence of the resistivity of the samples cut along the growth axis could be explained by the presence of channels and a correlated distribution of impurities aligned along the growth axis.