Abstract
Associative Processor (AP) combines data storage and data processing, and functions simultaneously as a massively parallel array SIMD processor and memory. Traditionally, AP is based on CMOS technology, similar to other classes of massively parallel SIMD processors. The main component of AP is a Content Addressable Memory (CAM) array. As CMOS feature scaling slows down, CAM experiences scalability problems. In this work, we propose and investigate an AP based on resistive CAM - the Resistive AP (ReAP). We show that resistive memory technology potentially allows scaling the AP from a few millions to a few hundred millions of processing units on a single silicon die. We compare the performance and power consumption of a ReAP to a CMOS AP and a conventional SIMD accelerator (GPU) and show that ReAP, although exhibiting higher power density, allows better scalability and higher performance.
Original language | English |
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Article number | 6966736 |
Pages (from-to) | 148-151 |
Number of pages | 4 |
Journal | IEEE Computer Architecture Letters |
Volume | 14 |
Issue number | 2 |
DOIs | |
State | Published - 1 Jul 2015 |
Externally published | Yes |
Bibliographical note
Publisher Copyright:© 2015 IEEE.
Keywords
- SIMD
- associative processor
- in-memory computing
- memristor
- resistive RAM