Remanent magnetization, lower critical fields and surface barriers in an YBa2Cu3O7 crystal

M. W. McElfresh; Y. Yeshurun; A. P. Malozemoff; F. Holtzberg

doi:10.1016/0378-4371(90)90382-3

Remanent magnetization, lower critical fields and surface barriers in an YBa₂Cu₃O₇ crystal

M. W. McElfresh, Y. Yeshurun, A. P. Malozemoff, F. Holtzberg

Institute of Superconductivity Laboratory for Magnetic Measurements

IBM

Research output: Contribution to journal › Article › peer-review

48 Scopus citations

Abstract

The isothermal remanent magnetization M_rem of an YBa₂Cu₃O₇ crystal was measured as function of the maximum applied field 10 Oe≤H_m ≤40 kOe, for several isotherms 4.2K≤ T≤65K, for H_m⊥c and H_m∥c. Above an onset field for flux penetration H_p, M_rem initially increases sharply with H_m and then crosses over to a saturation value. An extended Bean model is used to fit the M_rem(H) data. The derived onset field for T>50K is approximately linear with T and is in agreement with the lower critical fields H_c1(T) measured by other techniques. At lower temperatures, however, H_p continues to increase. We incorporate surface barriers in the extended Bean model and consider the possibility that the low-temperature increase in H_p might be due to such barriers.

Original language	English
Pages (from-to)	308-318
Number of pages	11
Journal	Physica A: Statistical Mechanics and its Applications
Volume	168
Issue number	1
DOIs	https://doi.org/10.1016/0378-4371(90)90382-3
State	Published - 1 Sep 1990

Bibliographical note

Funding Information:
We wish to acknowledgeim portant discussionsw ith C. Schlenker, V.V. Moshchalkov, H. Fukuyama, I. lye and T. Matsushita. This research is supported in part by the U.S.-Israel Binational Science Foundation. We particularly credit V. Moschalkov,w ho suggestedth e measuringo f the time dependenceo f the remanenceo nsetas a test of surfaceb arriers.

Funding

We wish to acknowledgeim portant discussionsw ith C. Schlenker, V.V. Moshchalkov, H. Fukuyama, I. lye and T. Matsushita. This research is supported in part by the U.S.-Israel Binational Science Foundation. We particularly credit V. Moschalkov,w ho suggestedth e measuringo f the time dependenceo f the remanenceo nsetas a test of surfaceb arriers.

Funders	Funder number
U.S.-Israel Binational Science Foundation

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10.1016/0378-4371(90)90382-3

Cite this

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title = "Remanent magnetization, lower critical fields and surface barriers in an YBa2Cu3O7 crystal",

abstract = "The isothermal remanent magnetization Mrem of an YBa2Cu3O7 crystal was measured as function of the maximum applied field 10 Oe≤Hm ≤40 kOe, for several isotherms 4.2K≤ T≤65K, for Hm⊥c and Hm∥c. Above an onset field for flux penetration Hp, Mrem initially increases sharply with Hm and then crosses over to a saturation value. An extended Bean model is used to fit the Mrem(H) data. The derived onset field for T>50K is approximately linear with T and is in agreement with the lower critical fields Hc1(T) measured by other techniques. At lower temperatures, however, Hp continues to increase. We incorporate surface barriers in the extended Bean model and consider the possibility that the low-temperature increase in Hp might be due to such barriers.",

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AU - Yeshurun, Y.

AU - Malozemoff, A. P.

AU - Holtzberg, F.

N1 - Funding Information: We wish to acknowledgeim portant discussionsw ith C. Schlenker, V.V. Moshchalkov, H. Fukuyama, I. lye and T. Matsushita. This research is supported in part by the U.S.-Israel Binational Science Foundation. We particularly credit V. Moschalkov,w ho suggestedth e measuringo f the time dependenceo f the remanenceo nsetas a test of surfaceb arriers.

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N2 - The isothermal remanent magnetization Mrem of an YBa2Cu3O7 crystal was measured as function of the maximum applied field 10 Oe≤Hm ≤40 kOe, for several isotherms 4.2K≤ T≤65K, for Hm⊥c and Hm∥c. Above an onset field for flux penetration Hp, Mrem initially increases sharply with Hm and then crosses over to a saturation value. An extended Bean model is used to fit the Mrem(H) data. The derived onset field for T>50K is approximately linear with T and is in agreement with the lower critical fields Hc1(T) measured by other techniques. At lower temperatures, however, Hp continues to increase. We incorporate surface barriers in the extended Bean model and consider the possibility that the low-temperature increase in Hp might be due to such barriers.

AB - The isothermal remanent magnetization Mrem of an YBa2Cu3O7 crystal was measured as function of the maximum applied field 10 Oe≤Hm ≤40 kOe, for several isotherms 4.2K≤ T≤65K, for Hm⊥c and Hm∥c. Above an onset field for flux penetration Hp, Mrem initially increases sharply with Hm and then crosses over to a saturation value. An extended Bean model is used to fit the Mrem(H) data. The derived onset field for T>50K is approximately linear with T and is in agreement with the lower critical fields Hc1(T) measured by other techniques. At lower temperatures, however, Hp continues to increase. We incorporate surface barriers in the extended Bean model and consider the possibility that the low-temperature increase in Hp might be due to such barriers.

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