Remanent magnetization, lower critical fields and surface barriers in an YBa2Cu3O7 crystal

M. W. McElfresh, Y. Yeshurun, A. P. Malozemoff, F. Holtzberg

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The isothermal remanent magnetization Mrem of an YBa2Cu3O7 crystal was measured as function of the maximum applied field 10 Oe≤Hm ≤40 kOe, for several isotherms 4.2K≤ T≤65K, for Hm⊥c and Hm∥c. Above an onset field for flux penetration Hp, Mrem initially increases sharply with Hm and then crosses over to a saturation value. An extended Bean model is used to fit the Mrem(H) data. The derived onset field for T>50K is approximately linear with T and is in agreement with the lower critical fields Hc1(T) measured by other techniques. At lower temperatures, however, Hp continues to increase. We incorporate surface barriers in the extended Bean model and consider the possibility that the low-temperature increase in Hp might be due to such barriers.

Original languageEnglish
Pages (from-to)308-318
Number of pages11
JournalPhysica A: Statistical Mechanics and its Applications
Issue number1
StatePublished - 1 Sep 1990

Bibliographical note

Funding Information:
We wish to acknowledgeim portant discussionsw ith C. Schlenker, V.V. Moshchalkov, H. Fukuyama, I. lye and T. Matsushita. This research is supported in part by the U.S.-Israel Binational Science Foundation. We particularly credit V. Moschalkov,w ho suggestedth e measuringo f the time dependenceo f the remanenceo nsetas a test of surfaceb arriers.


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