Redistribution of implanted dopants in GaN

X. A. Cao; R. G. Wilson; J. C. Zolper; S. J. Pearton; J. Han; R. J. Shul; D. J. Rieger; R. K. Singh; M. Fu; V. Scarvepalli; J. A. Sekhar; J. M. Zavada

doi:10.1007/s11664-999-0025-y

Redistribution of implanted dopants in GaN

X. A. Cao
, R. G. Wilson
, J. C. Zolper
, S. J. Pearton
, J. Han
, R. J. Shul
, D. J. Rieger
, R. K. Singh
, M. Fu
, V. Scarvepalli
, J. A. Sekhar
, J. M. Zavada

Research output: Contribution to journal › Conference article › peer-review

14 Scopus citations

Abstract

Donor (S, Se, and Te) and acceptor (Mg, Be, and C) dopants have been implanted into GaN at doses of 3-5×10¹⁴ cm^-2 and annealed at temperatures up to 1450 °C. No redistribution of any of the elements is detectable by secondary ion mass spectrometry, except for Be, which displays behavior consistent with damage-assisted diffusion at 900 °C. At higher temperatures, there is no further movement of the Be, for peak annealing temperature durations of 10 s. Effective diffusivities are ≤2×10^-13 cm²·s^-1 at 1450 °C for each of the dopants in GaN.

Original language	English
Pages (from-to)	261-265
Number of pages	5
Journal	Journal of Electronic Materials
Volume	28
Issue number	3
DOIs	https://doi.org/10.1007/s11664-999-0025-y
State	Published - Mar 1999
Externally published	Yes
Event	Proceedings of the 1998 40th Electronic Materials Conference, EMC-98 - Charlottesville, VA, USA Duration: 24 Jun 1998 → 26 Jun 1998

Funding

The work of the University of Florida is partially supported by a DARPA/EPRI grant MDA 972-98-1-0006 (D. Radack/J. Melcher) and by an NSF grant DMR 9732865 (L. Hess). Sandia is a multiprogram laboratory operated by Sandia Corporation, a Lockheed-Martin company, for the U.S. Department of Energy under contract No. DEAC04-94 AL 85000. The work of R.G. Wilson is partially supported by an ARO grant.

Funders	Funder number
DARPA/EPRI	MDA 972-98-1-0006
Sandia Corporation
National Science Foundation	DMR 9732865
U.S. Department of Energy
Army Research Office

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10.1007/s11664-999-0025-y

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@article{c9b995bdeb2140e1ad62cfa562ae435d,

title = "Redistribution of implanted dopants in GaN",

abstract = "Donor (S, Se, and Te) and acceptor (Mg, Be, and C) dopants have been implanted into GaN at doses of 3-5×1014 cm-2 and annealed at temperatures up to 1450 °C. No redistribution of any of the elements is detectable by secondary ion mass spectrometry, except for Be, which displays behavior consistent with damage-assisted diffusion at 900 °C. At higher temperatures, there is no further movement of the Be, for peak annealing temperature durations of 10 s. Effective diffusivities are ≤2×10-13 cm2·s-1 at 1450 °C for each of the dopants in GaN.",

author = "Cao, \{X. A.\} and Wilson, \{R. G.\} and Zolper, \{J. C.\} and Pearton, \{S. J.\} and J. Han and Shul, \{R. J.\} and Rieger, \{D. J.\} and Singh, \{R. K.\} and M. Fu and V. Scarvepalli and Sekhar, \{J. A.\} and Zavada, \{J. M.\}",

year = "1999",

month = mar,

doi = "10.1007/s11664-999-0025-y",

language = "אנגלית",

volume = "28",

pages = "261--265",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer New York",

number = "3",

note = "Proceedings of the 1998 40th Electronic Materials Conference, EMC-98 ; Conference date: 24-06-1998 Through 26-06-1998",

}

TY - JOUR

T1 - Redistribution of implanted dopants in GaN

AU - Cao, X. A.

AU - Wilson, R. G.

AU - Zolper, J. C.

AU - Pearton, S. J.

AU - Han, J.

AU - Shul, R. J.

AU - Rieger, D. J.

AU - Singh, R. K.

AU - Fu, M.

AU - Scarvepalli, V.

AU - Sekhar, J. A.

AU - Zavada, J. M.

PY - 1999/3

Y1 - 1999/3

N2 - Donor (S, Se, and Te) and acceptor (Mg, Be, and C) dopants have been implanted into GaN at doses of 3-5×1014 cm-2 and annealed at temperatures up to 1450 °C. No redistribution of any of the elements is detectable by secondary ion mass spectrometry, except for Be, which displays behavior consistent with damage-assisted diffusion at 900 °C. At higher temperatures, there is no further movement of the Be, for peak annealing temperature durations of 10 s. Effective diffusivities are ≤2×10-13 cm2·s-1 at 1450 °C for each of the dopants in GaN.

AB - Donor (S, Se, and Te) and acceptor (Mg, Be, and C) dopants have been implanted into GaN at doses of 3-5×1014 cm-2 and annealed at temperatures up to 1450 °C. No redistribution of any of the elements is detectable by secondary ion mass spectrometry, except for Be, which displays behavior consistent with damage-assisted diffusion at 900 °C. At higher temperatures, there is no further movement of the Be, for peak annealing temperature durations of 10 s. Effective diffusivities are ≤2×10-13 cm2·s-1 at 1450 °C for each of the dopants in GaN.

UR - https://www.scopus.com/pages/publications/0032634869

U2 - 10.1007/s11664-999-0025-y

DO - 10.1007/s11664-999-0025-y

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.conferencearticle???

AN - SCOPUS:0032634869

SN - 0361-5235

VL - 28

SP - 261

EP - 265

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 3

T2 - Proceedings of the 1998 40th Electronic Materials Conference, EMC-98

Y2 - 24 June 1998 through 26 June 1998

ER -

Redistribution of implanted dopants in GaN

Abstract

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