Redistribution of implanted dopants in GaN

X. A. Cao; R. G. Wilson; J. C. Zolper; S. J. Pearton; J. Han; R. J. Shul; D. J. Rieger; R. K. Singh; M. Fu; V. Scarvepalli; J. A. Sekhar; J. M. Zavada

doi:10.1007/s11664-999-0025-y

Redistribution of implanted dopants in GaN

X. A. Cao, R. G. Wilson, J. C. Zolper, S. J. Pearton, J. Han, R. J. Shul, D. J. Rieger, R. K. Singh, M. Fu, V. Scarvepalli, J. A. Sekhar, J. M. Zavada

Research output: Contribution to journal › Conference article › peer-review

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Abstract

Donor (S, Se, and Te) and acceptor (Mg, Be, and C) dopants have been implanted into GaN at doses of 3-5×10¹⁴ cm^-2 and annealed at temperatures up to 1450 °C. No redistribution of any of the elements is detectable by secondary ion mass spectrometry, except for Be, which displays behavior consistent with damage-assisted diffusion at 900 °C. At higher temperatures, there is no further movement of the Be, for peak annealing temperature durations of 10 s. Effective diffusivities are ≤2×10^-13 cm²·s^-1 at 1450 °C for each of the dopants in GaN.

Original language	English
Pages (from-to)	261-265
Number of pages	5
Journal	Journal of Electronic Materials
Volume	28
Issue number	3
DOIs	https://doi.org/10.1007/s11664-999-0025-y
State	Published - Mar 1999
Externally published	Yes
Event	Proceedings of the 1998 40th Electronic Materials Conference, EMC-98 - Charlottesville, VA, USA Duration: 24 Jun 1998 → 26 Jun 1998

Funding

The work of the University of Florida is partially supported by a DARPA/EPRI grant MDA 972-98-1-0006 (D. Radack/J. Melcher) and by an NSF grant DMR 9732865 (L. Hess). Sandia is a multiprogram laboratory operated by Sandia Corporation, a Lockheed-Martin company, for the U.S. Department of Energy under contract No. DEAC04-94 AL 85000. The work of R.G. Wilson is partially supported by an ARO grant.

Funders	Funder number
DARPA/EPRI	MDA 972-98-1-0006
Sandia Corporation
National Science Foundation	DMR 9732865
U.S. Department of Energy
Army Research Office

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10.1007/s11664-999-0025-y

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title = "Redistribution of implanted dopants in GaN",

abstract = "Donor (S, Se, and Te) and acceptor (Mg, Be, and C) dopants have been implanted into GaN at doses of 3-5×1014 cm-2 and annealed at temperatures up to 1450 °C. No redistribution of any of the elements is detectable by secondary ion mass spectrometry, except for Be, which displays behavior consistent with damage-assisted diffusion at 900 °C. At higher temperatures, there is no further movement of the Be, for peak annealing temperature durations of 10 s. Effective diffusivities are ≤2×10-13 cm2·s-1 at 1450 °C for each of the dopants in GaN.",

author = "Cao, {X. A.} and Wilson, {R. G.} and Zolper, {J. C.} and Pearton, {S. J.} and J. Han and Shul, {R. J.} and Rieger, {D. J.} and Singh, {R. K.} and M. Fu and V. Scarvepalli and Sekhar, {J. A.} and Zavada, {J. M.}",

year = "1999",

month = mar,

doi = "10.1007/s11664-999-0025-y",

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TY - JOUR

T1 - Redistribution of implanted dopants in GaN

AU - Cao, X. A.

AU - Wilson, R. G.

AU - Zolper, J. C.

AU - Pearton, S. J.

AU - Han, J.

AU - Shul, R. J.

AU - Rieger, D. J.

AU - Singh, R. K.

AU - Fu, M.

AU - Scarvepalli, V.

AU - Sekhar, J. A.

AU - Zavada, J. M.

PY - 1999/3

Y1 - 1999/3

N2 - Donor (S, Se, and Te) and acceptor (Mg, Be, and C) dopants have been implanted into GaN at doses of 3-5×1014 cm-2 and annealed at temperatures up to 1450 °C. No redistribution of any of the elements is detectable by secondary ion mass spectrometry, except for Be, which displays behavior consistent with damage-assisted diffusion at 900 °C. At higher temperatures, there is no further movement of the Be, for peak annealing temperature durations of 10 s. Effective diffusivities are ≤2×10-13 cm2·s-1 at 1450 °C for each of the dopants in GaN.

AB - Donor (S, Se, and Te) and acceptor (Mg, Be, and C) dopants have been implanted into GaN at doses of 3-5×1014 cm-2 and annealed at temperatures up to 1450 °C. No redistribution of any of the elements is detectable by secondary ion mass spectrometry, except for Be, which displays behavior consistent with damage-assisted diffusion at 900 °C. At higher temperatures, there is no further movement of the Be, for peak annealing temperature durations of 10 s. Effective diffusivities are ≤2×10-13 cm2·s-1 at 1450 °C for each of the dopants in GaN.

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Y2 - 24 June 1998 through 26 June 1998

ER -

Redistribution of implanted dopants in GaN

Abstract

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