Redistribution of implanted dopants in GaN

X. A. Cao, R. G. Wilson, J. C. Zolper, S. J. Pearton, J. Han, R. J. Shul, D. J. Rieger, R. K. Singh, M. Fu, V. Scarvepalli, J. A. Sekhar, J. M. Zavada

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14 Scopus citations


Donor (S, Se, and Te) and acceptor (Mg, Be, and C) dopants have been implanted into GaN at doses of 3-5×1014 cm-2 and annealed at temperatures up to 1450 °C. No redistribution of any of the elements is detectable by secondary ion mass spectrometry, except for Be, which displays behavior consistent with damage-assisted diffusion at 900 °C. At higher temperatures, there is no further movement of the Be, for peak annealing temperature durations of 10 s. Effective diffusivities are ≤2×10-13 cm2·s-1 at 1450 °C for each of the dopants in GaN.

Original languageEnglish
Pages (from-to)261-265
Number of pages5
JournalJournal of Electronic Materials
Issue number3
StatePublished - Mar 1999
Externally publishedYes
EventProceedings of the 1998 40th Electronic Materials Conference, EMC-98 - Charlottesville, VA, USA
Duration: 24 Jun 199826 Jun 1998


The work of the University of Florida is partially supported by a DARPA/EPRI grant MDA 972-98-1-0006 (D. Radack/J. Melcher) and by an NSF grant DMR 9732865 (L. Hess). Sandia is a multiprogram laboratory operated by Sandia Corporation, a Lockheed-Martin company, for the U.S. Department of Energy under contract No. DEAC04-94 AL 85000. The work of R.G. Wilson is partially supported by an ARO grant.

FundersFunder number
DARPA/EPRIMDA 972-98-1-0006
Sandia Corporation
National Science FoundationDMR 9732865
U.S. Department of Energy
Army Research Office


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