Redistribution and activation of implanted S, Se, Te, Be, Mg, and C in GaN

R. G. Wilson; J. M. Zavada; X. A. Cao; R. K. Singh; S. J. Pearton; H. J. Quo; S. J. Pennycook; M. Fu; J. A. Sekhar; V. Scarvepalli; R. J. Shu; J. Han; D. J. Rieger; J. C. Zolper; C. R. Abernathy

doi:10.1116/1.581800

Redistribution and activation of implanted S, Se, Te, Be, Mg, and C in GaN

R. G. Wilson
, J. M. Zavada
, X. A. Cao
, R. K. Singh
, S. J. Pearton
, H. J. Quo
, S. J. Pennycook
, M. Fu
, J. A. Sekhar
, V. Scarvepalli
, R. J. Shu
, J. Han
, D. J. Rieger
, J. C. Zolper
, C. R. Abernathy

United States Army Research Office
University of Florida
Oak Ridge National Laboratory
Micropyretics Heaters Intl. Inc.
Sandia National Laboratories
Office of Naval Research

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

A variety of different possible donor and acceptor impurities have been implanted into GaN and annealed up to 1450°C. S⁺ and Te⁺ produce peak electron concentrations ≤5×10¹⁸ cm^-3, well below that achievable with Si⁺. Mg produces p-type conductivity, but Be⁺- and C⁺ - implanted samples remained n type. No redistribution was observed for any of the implanted species for 1450°C annealing. Much more effective damage removal was achieved for 1400°C annealing of high-dose (5 × 10¹⁵ cm^-2) Si⁺ implanted GaN, compared to the more commonly used 1100°C annealing.

Original language	English
Pages (from-to)	1226-1229
Number of pages	4
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	17
Issue number	4
DOIs	https://doi.org/10.1116/1.581800
State	Published - 1999
Externally published	Yes

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Wilson, R. G., Zavada, J. M., Cao, X. A., Singh, R. K., Pearton, S. J., Quo, H. J., Pennycook, S. J., Fu, M., Sekhar, J. A., Scarvepalli, V., Shu, R. J., Han, J., Rieger, D. J., Zolper, J. C., & Abernathy, C. R. (1999). Redistribution and activation of implanted S, Se, Te, Be, Mg, and C in GaN. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 17(4), 1226-1229. https://doi.org/10.1116/1.581800

@article{fd8a4def026f44ffb61926ea6ac92ff7,

title = "Redistribution and activation of implanted S, Se, Te, Be, Mg, and C in GaN",

abstract = "A variety of different possible donor and acceptor impurities have been implanted into GaN and annealed up to 1450°C. S+ and Te+ produce peak electron concentrations ≤5×1018 cm-3, well below that achievable with Si+. Mg produces p-type conductivity, but Be+- and C+ - implanted samples remained n type. No redistribution was observed for any of the implanted species for 1450°C annealing. Much more effective damage removal was achieved for 1400°C annealing of high-dose (5 × 1015 cm-2) Si+ implanted GaN, compared to the more commonly used 1100°C annealing.",

author = "Wilson, \{R. G.\} and Zavada, \{J. M.\} and Cao, \{X. A.\} and Singh, \{R. K.\} and Pearton, \{S. J.\} and Quo, \{H. J.\} and Pennycook, \{S. J.\} and M. Fu and Sekhar, \{J. A.\} and V. Scarvepalli and Shu, \{R. J.\} and J. Han and Rieger, \{D. J.\} and Zolper, \{J. C.\} and Abernathy, \{C. R.\}",

year = "1999",

doi = "10.1116/1.581800",

language = "אנגלית",

volume = "17",

pages = "1226--1229",

journal = "Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films",

issn = "0734-2101",

publisher = "AVS Science and Technology Society",

number = "4",

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Wilson, RG, Zavada, JM, Cao, XA, Singh, RK, Pearton, SJ, Quo, HJ, Pennycook, SJ, Fu, M, Sekhar, JA, Scarvepalli, V, Shu, RJ, Han, J, Rieger, DJ, Zolper, JC & Abernathy, CR 1999, 'Redistribution and activation of implanted S, Se, Te, Be, Mg, and C in GaN', Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, vol. 17, no. 4, pp. 1226-1229. https://doi.org/10.1116/1.581800

TY - JOUR

T1 - Redistribution and activation of implanted S, Se, Te, Be, Mg, and C in GaN

AU - Wilson, R. G.

AU - Zavada, J. M.

AU - Cao, X. A.

AU - Singh, R. K.

AU - Pearton, S. J.

AU - Quo, H. J.

AU - Pennycook, S. J.

AU - Fu, M.

AU - Sekhar, J. A.

AU - Scarvepalli, V.

AU - Shu, R. J.

AU - Han, J.

AU - Rieger, D. J.

AU - Zolper, J. C.

AU - Abernathy, C. R.

PY - 1999

Y1 - 1999

N2 - A variety of different possible donor and acceptor impurities have been implanted into GaN and annealed up to 1450°C. S+ and Te+ produce peak electron concentrations ≤5×1018 cm-3, well below that achievable with Si+. Mg produces p-type conductivity, but Be+- and C+ - implanted samples remained n type. No redistribution was observed for any of the implanted species for 1450°C annealing. Much more effective damage removal was achieved for 1400°C annealing of high-dose (5 × 1015 cm-2) Si+ implanted GaN, compared to the more commonly used 1100°C annealing.

AB - A variety of different possible donor and acceptor impurities have been implanted into GaN and annealed up to 1450°C. S+ and Te+ produce peak electron concentrations ≤5×1018 cm-3, well below that achievable with Si+. Mg produces p-type conductivity, but Be+- and C+ - implanted samples remained n type. No redistribution was observed for any of the implanted species for 1450°C annealing. Much more effective damage removal was achieved for 1400°C annealing of high-dose (5 × 1015 cm-2) Si+ implanted GaN, compared to the more commonly used 1100°C annealing.

UR - https://www.scopus.com/pages/publications/0005306582

U2 - 10.1116/1.581800

DO - 10.1116/1.581800

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AN - SCOPUS:0005306582

SN - 0734-2101

VL - 17

SP - 1226

EP - 1229

JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

IS - 4

ER -

Redistribution and activation of implanted S, Se, Te, Be, Mg, and C in GaN

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