Redistribution and activation of implanted S, Se, Te, Be, Mg, and C in GaN

R. G. Wilson; J. M. Zavada; X. A. Cao; R. K. Singh; S. J. Pearton; H. J. Quo; S. J. Pennycook; M. Fu; J. A. Sekhar; V. Scarvepalli; R. J. Shu; J. Han; D. J. Rieger; J. C. Zolper; C. R. Abernathy

doi:10.1116/1.581800

Redistribution and activation of implanted S, Se, Te, Be, Mg, and C in GaN

R. G. Wilson, J. M. Zavada, X. A. Cao, R. K. Singh, S. J. Pearton, H. J. Quo, S. J. Pennycook, M. Fu, J. A. Sekhar, V. Scarvepalli, R. J. Shu, J. Han, D. J. Rieger, J. C. Zolper, C. R. Abernathy

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Abstract

A variety of different possible donor and acceptor impurities have been implanted into GaN and annealed up to 1450°C. S⁺ and Te⁺ produce peak electron concentrations ≤5×10¹⁸ cm^-3, well below that achievable with Si⁺. Mg produces p-type conductivity, but Be⁺- and C⁺ - implanted samples remained n type. No redistribution was observed for any of the implanted species for 1450°C annealing. Much more effective damage removal was achieved for 1400°C annealing of high-dose (5 × 10¹⁵ cm^-2) Si⁺ implanted GaN, compared to the more commonly used 1100°C annealing.

Original language	English
Pages (from-to)	1226-1229
Number of pages	4
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	17
Issue number	4
DOIs	https://doi.org/10.1116/1.581800
State	Published - 1999
Externally published	Yes

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Wilson, R. G., Zavada, J. M., Cao, X. A., Singh, R. K., Pearton, S. J., Quo, H. J., Pennycook, S. J., Fu, M., Sekhar, J. A., Scarvepalli, V., Shu, R. J., Han, J., Rieger, D. J., Zolper, J. C., & Abernathy, C. R. (1999). Redistribution and activation of implanted S, Se, Te, Be, Mg, and C in GaN. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 17(4), 1226-1229. https://doi.org/10.1116/1.581800

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title = "Redistribution and activation of implanted S, Se, Te, Be, Mg, and C in GaN",

abstract = "A variety of different possible donor and acceptor impurities have been implanted into GaN and annealed up to 1450°C. S+ and Te+ produce peak electron concentrations ≤5×1018 cm-3, well below that achievable with Si+. Mg produces p-type conductivity, but Be+- and C+ - implanted samples remained n type. No redistribution was observed for any of the implanted species for 1450°C annealing. Much more effective damage removal was achieved for 1400°C annealing of high-dose (5 × 1015 cm-2) Si+ implanted GaN, compared to the more commonly used 1100°C annealing.",

author = "Wilson, {R. G.} and Zavada, {J. M.} and Cao, {X. A.} and Singh, {R. K.} and Pearton, {S. J.} and Quo, {H. J.} and Pennycook, {S. J.} and M. Fu and Sekhar, {J. A.} and V. Scarvepalli and Shu, {R. J.} and J. Han and Rieger, {D. J.} and Zolper, {J. C.} and Abernathy, {C. R.}",

year = "1999",

doi = "10.1116/1.581800",

language = "אנגלית",

volume = "17",

pages = "1226--1229",

journal = "Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films",

issn = "0734-2101",

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Wilson, RG, Zavada, JM, Cao, XA, Singh, RK, Pearton, SJ, Quo, HJ, Pennycook, SJ, Fu, M, Sekhar, JA, Scarvepalli, V, Shu, RJ, Han, J, Rieger, DJ, Zolper, JC & Abernathy, CR 1999, 'Redistribution and activation of implanted S, Se, Te, Be, Mg, and C in GaN', Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, vol. 17, no. 4, pp. 1226-1229. https://doi.org/10.1116/1.581800

TY - JOUR

T1 - Redistribution and activation of implanted S, Se, Te, Be, Mg, and C in GaN

AU - Wilson, R. G.

AU - Zavada, J. M.

AU - Cao, X. A.

AU - Singh, R. K.

AU - Pearton, S. J.

AU - Quo, H. J.

AU - Pennycook, S. J.

AU - Fu, M.

AU - Sekhar, J. A.

AU - Scarvepalli, V.

AU - Shu, R. J.

AU - Han, J.

AU - Rieger, D. J.

AU - Zolper, J. C.

AU - Abernathy, C. R.

PY - 1999

Y1 - 1999

N2 - A variety of different possible donor and acceptor impurities have been implanted into GaN and annealed up to 1450°C. S+ and Te+ produce peak electron concentrations ≤5×1018 cm-3, well below that achievable with Si+. Mg produces p-type conductivity, but Be+- and C+ - implanted samples remained n type. No redistribution was observed for any of the implanted species for 1450°C annealing. Much more effective damage removal was achieved for 1400°C annealing of high-dose (5 × 1015 cm-2) Si+ implanted GaN, compared to the more commonly used 1100°C annealing.

AB - A variety of different possible donor and acceptor impurities have been implanted into GaN and annealed up to 1450°C. S+ and Te+ produce peak electron concentrations ≤5×1018 cm-3, well below that achievable with Si+. Mg produces p-type conductivity, but Be+- and C+ - implanted samples remained n type. No redistribution was observed for any of the implanted species for 1450°C annealing. Much more effective damage removal was achieved for 1400°C annealing of high-dose (5 × 1015 cm-2) Si+ implanted GaN, compared to the more commonly used 1100°C annealing.

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SN - 0734-2101

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JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

IS - 4

ER -

Redistribution and activation of implanted S, Se, Te, Be, Mg, and C in GaN

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