Redistribution and activation of implanted S, Se, Te, Be, Mg, and C in GaN

R. G. Wilson, J. M. Zavada, X. A. Cao, R. K. Singh, S. J. Pearton, H. J. Quo, S. J. Pennycook, M. Fu, J. A. Sekhar, V. Scarvepalli, R. J. Shu, J. Han, D. J. Rieger, J. C. Zolper, C. R. Abernathy

Research output: Contribution to journalArticlepeer-review

16 Scopus citations


A variety of different possible donor and acceptor impurities have been implanted into GaN and annealed up to 1450°C. S+ and Te+ produce peak electron concentrations ≤5×1018 cm-3, well below that achievable with Si+. Mg produces p-type conductivity, but Be+- and C+ - implanted samples remained n type. No redistribution was observed for any of the implanted species for 1450°C annealing. Much more effective damage removal was achieved for 1400°C annealing of high-dose (5 × 1015 cm-2) Si+ implanted GaN, compared to the more commonly used 1100°C annealing.

Original languageEnglish
Pages (from-to)1226-1229
Number of pages4
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Issue number4
StatePublished - 1999
Externally publishedYes


Dive into the research topics of 'Redistribution and activation of implanted S, Se, Te, Be, Mg, and C in GaN'. Together they form a unique fingerprint.

Cite this