Recrystallization of amorphous silicon using rapid thermal processing, laser annealing and furnace heating

J. Viatella; R. K. Singh; R. P.S. Thakur; G. Sandhu; S. D. Harkness

doi:10.1557/proc-342-297

Recrystallization of amorphous silicon using rapid thermal processing, laser annealing and furnace heating

J. Viatella
, R. K. Singh
, R. P.S. Thakur
, G. Sandhu
, S. D. Harkness

University of Florida

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

Recrystallization of amorphous silicon has been investigated using conventional furnace annealing, incoherent light-based rapid thermal annealing (RTA) and pulsed laser annealing using excimer laser (wavelength = 248 nm, energy density = 0.1-0.6 J/cm²) at a pulse width of approximately 20 nanoseconds. The effects of annealing methods are characterized for grain growth and crystallized orientation using transmission electron microscopy (TEM) and X-ray diffraction analysis. The various recrystallization methods are compared based on the structural properties of the resulting film and optimized thermal budgets for each heating mechanism are discussed.

Original language	English
Pages (from-to)	297-302
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	342
DOIs	https://doi.org/10.1557/proc-342-297
State	Published - 1994
Externally published	Yes
Event	Proceedings of the 1994 Spring Meeting of the Materials Research Society - San Francisco, CA, USA Duration: 4 Apr 1994 → 7 Apr 1994

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title = "Recrystallization of amorphous silicon using rapid thermal processing, laser annealing and furnace heating",

abstract = "Recrystallization of amorphous silicon has been investigated using conventional furnace annealing, incoherent light-based rapid thermal annealing (RTA) and pulsed laser annealing using excimer laser (wavelength = 248 nm, energy density = 0.1-0.6 J/cm2) at a pulse width of approximately 20 nanoseconds. The effects of annealing methods are characterized for grain growth and crystallized orientation using transmission electron microscopy (TEM) and X-ray diffraction analysis. The various recrystallization methods are compared based on the structural properties of the resulting film and optimized thermal budgets for each heating mechanism are discussed.",

author = "J. Viatella and Singh, \{R. K.\} and Thakur, \{R. P.S.\} and G. Sandhu and Harkness, \{S. D.\}",

year = "1994",

doi = "10.1557/proc-342-297",

language = "אנגלית",

volume = "342",

pages = "297--302",

journal = "Materials Research Society Symposium - Proceedings",

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note = "Proceedings of the 1994 Spring Meeting of the Materials Research Society ; Conference date: 04-04-1994 Through 07-04-1994",

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T1 - Recrystallization of amorphous silicon using rapid thermal processing, laser annealing and furnace heating

AU - Viatella, J.

AU - Singh, R. K.

AU - Thakur, R. P.S.

AU - Sandhu, G.

AU - Harkness, S. D.

PY - 1994

Y1 - 1994

N2 - Recrystallization of amorphous silicon has been investigated using conventional furnace annealing, incoherent light-based rapid thermal annealing (RTA) and pulsed laser annealing using excimer laser (wavelength = 248 nm, energy density = 0.1-0.6 J/cm2) at a pulse width of approximately 20 nanoseconds. The effects of annealing methods are characterized for grain growth and crystallized orientation using transmission electron microscopy (TEM) and X-ray diffraction analysis. The various recrystallization methods are compared based on the structural properties of the resulting film and optimized thermal budgets for each heating mechanism are discussed.

AB - Recrystallization of amorphous silicon has been investigated using conventional furnace annealing, incoherent light-based rapid thermal annealing (RTA) and pulsed laser annealing using excimer laser (wavelength = 248 nm, energy density = 0.1-0.6 J/cm2) at a pulse width of approximately 20 nanoseconds. The effects of annealing methods are characterized for grain growth and crystallized orientation using transmission electron microscopy (TEM) and X-ray diffraction analysis. The various recrystallization methods are compared based on the structural properties of the resulting film and optimized thermal budgets for each heating mechanism are discussed.

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JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1994 Spring Meeting of the Materials Research Society

Y2 - 4 April 1994 through 7 April 1994

ER -

Recrystallization of amorphous silicon using rapid thermal processing, laser annealing and furnace heating

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