TY - JOUR
T1 - Recrystallization of amorphous silicon using rapid thermal processing, laser annealing and furnace heating
AU - Viatella, J.
AU - Singh, R. K.
AU - Thakur, R. P.S.
AU - Sandhu, G.
AU - Harkness, S. D.
PY - 1994
Y1 - 1994
N2 - Recrystallization of amorphous silicon has been investigated using conventional furnace annealing, incoherent light-based rapid thermal annealing (RTA) and pulsed laser annealing using excimer laser (wavelength = 248 nm, energy density = 0.1-0.6 J/cm2) at a pulse width of approximately 20 nanoseconds. The effects of annealing methods are characterized for grain growth and crystallized orientation using transmission electron microscopy (TEM) and X-ray diffraction analysis. The various recrystallization methods are compared based on the structural properties of the resulting film and optimized thermal budgets for each heating mechanism are discussed.
AB - Recrystallization of amorphous silicon has been investigated using conventional furnace annealing, incoherent light-based rapid thermal annealing (RTA) and pulsed laser annealing using excimer laser (wavelength = 248 nm, energy density = 0.1-0.6 J/cm2) at a pulse width of approximately 20 nanoseconds. The effects of annealing methods are characterized for grain growth and crystallized orientation using transmission electron microscopy (TEM) and X-ray diffraction analysis. The various recrystallization methods are compared based on the structural properties of the resulting film and optimized thermal budgets for each heating mechanism are discussed.
UR - http://www.scopus.com/inward/record.url?scp=0027961749&partnerID=8YFLogxK
U2 - 10.1557/proc-342-297
DO - 10.1557/proc-342-297
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AN - SCOPUS:0027961749
SN - 0272-9172
VL - 342
SP - 297
EP - 302
JO - Materials Research Society Symposium - Proceedings
JF - Materials Research Society Symposium - Proceedings
T2 - Proceedings of the 1994 Spring Meeting of the Materials Research Society
Y2 - 4 April 1994 through 7 April 1994
ER -