Recrystallization of amorphous silicon using rapid thermal processing, laser annealing and furnace heating

J. Viatella, R. K. Singh, R. P.S. Thakur, G. Sandhu, S. D. Harkness

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations

Abstract

Recrystallization of amorphous silicon has been investigated using conventional furnace annealing, incoherent light-based rapid thermal annealing (RTA) and pulsed laser annealing using excimer laser (wavelength = 248 nm, energy density = 0.1-0.6 J/cm2) at a pulse width of approximately 20 nanoseconds. The effects of annealing methods are characterized for grain growth and crystallized orientation using transmission electron microscopy (TEM) and X-ray diffraction analysis. The various recrystallization methods are compared based on the structural properties of the resulting film and optimized thermal budgets for each heating mechanism are discussed.

Original languageEnglish
Pages (from-to)297-302
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume342
DOIs
StatePublished - 1994
Externally publishedYes
EventProceedings of the 1994 Spring Meeting of the Materials Research Society - San Francisco, CA, USA
Duration: 4 Apr 19947 Apr 1994

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