Recombination mechanisms of photogenerated carriers in a-Si:H

A. V. Zherzdev; A. A. Andreev; A. I. Kosarev; K. V. Kougia; I. S. Shlimak

doi:10.1016/S0022-3093(87)80404-0

Recombination mechanisms of photogenerated carriers in a-Si:H

A. V. Zherzdev
, A. A. Andreev
, A. I. Kosarev
, K. V. Kougia
, I. S. Shlimak

RAS - Ioffe Physico Technical Institute

Research output: Contribution to journal › Article › peer-review

Abstract

Experimental results on the study of photoconductivity and photoluminescence (steady state and relaxation after switching off excitation) in a wide range of temperature and other conditions are considered. Interpretation data in terms of tunnel mechanisms of recombination are discussed.

Original language	English
Pages (from-to)	159-162
Number of pages	4
Journal	Journal of Non-Crystalline Solids
Volume	90
Issue number	1-3
DOIs	https://doi.org/10.1016/S0022-3093(87)80404-0
State	Published - Feb 1987
Externally published	Yes

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10.1016/S0022-3093(87)80404-0

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title = "Recombination mechanisms of photogenerated carriers in a-Si:H",

abstract = "Experimental results on the study of photoconductivity and photoluminescence (steady state and relaxation after switching off excitation) in a wide range of temperature and other conditions are considered. Interpretation data in terms of tunnel mechanisms of recombination are discussed.",

author = "Zherzdev, \{A. V.\} and Andreev, \{A. A.\} and Kosarev, \{A. I.\} and Kougia, \{K. V.\} and Shlimak, \{I. S.\}",

year = "1987",

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AU - Zherzdev, A. V.

AU - Andreev, A. A.

AU - Kosarev, A. I.

AU - Kougia, K. V.

AU - Shlimak, I. S.

PY - 1987/2

Y1 - 1987/2

N2 - Experimental results on the study of photoconductivity and photoluminescence (steady state and relaxation after switching off excitation) in a wide range of temperature and other conditions are considered. Interpretation data in terms of tunnel mechanisms of recombination are discussed.

AB - Experimental results on the study of photoconductivity and photoluminescence (steady state and relaxation after switching off excitation) in a wide range of temperature and other conditions are considered. Interpretation data in terms of tunnel mechanisms of recombination are discussed.

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EP - 162

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

IS - 1-3

ER -

Recombination mechanisms of photogenerated carriers in a-Si:H

Abstract

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