Recombination mechanisms of photogenerated carriers in a-Si:H

A. V. Zherzdev; A. A. Andreev; A. I. Kosarev; K. V. Kougia; I. S. Shlimak

doi:10.1016/s0022-3093(87)80404-0

Recombination mechanisms of photogenerated carriers in a-Si:H

A. V. Zherzdev, A. A. Andreev, A. I. Kosarev, K. V. Kougia, I. S. Shlimak

RAS - Ioffe Physico Technical Institute

Research output: Contribution to journal › Article › peer-review

Abstract

Experimental results on the study of photoconductivity and photoluminescence (steady state and relaxation after switching off excitation) in a wide range of temperature and other conditions are considered. Interpretation data in terms of tunnel mechanisms of recombination are discussed.

Original language	English
Pages (from-to)	159-162
Number of pages	4
Journal	Journal of Non-Crystalline Solids
Volume	90
Issue number	1-3
DOIs	https://doi.org/10.1016/s0022-3093(87)80404-0
State	Published - Feb 1987
Externally published	Yes

Access to Document

10.1016/s0022-3093(87)80404-0

Cite this

@article{255f0a01bfac4d2a83744ac15d285b9a,

title = "Recombination mechanisms of photogenerated carriers in a-Si:H",

abstract = "Experimental results on the study of photoconductivity and photoluminescence (steady state and relaxation after switching off excitation) in a wide range of temperature and other conditions are considered. Interpretation data in terms of tunnel mechanisms of recombination are discussed.",

author = "Zherzdev, {A. V.} and Andreev, {A. A.} and Kosarev, {A. I.} and Kougia, {K. V.} and Shlimak, {I. S.}",

year = "1987",

month = feb,

doi = "10.1016/s0022-3093(87)80404-0",

language = "אנגלית",

volume = "90",

pages = "159--162",

journal = "Journal of Non-Crystalline Solids",

issn = "0022-3093",

publisher = "Elsevier",

number = "1-3",

}

TY - JOUR

T1 - Recombination mechanisms of photogenerated carriers in a-Si:H

AU - Zherzdev, A. V.

AU - Andreev, A. A.

AU - Kosarev, A. I.

AU - Kougia, K. V.

AU - Shlimak, I. S.

PY - 1987/2

Y1 - 1987/2

N2 - Experimental results on the study of photoconductivity and photoluminescence (steady state and relaxation after switching off excitation) in a wide range of temperature and other conditions are considered. Interpretation data in terms of tunnel mechanisms of recombination are discussed.

AB - Experimental results on the study of photoconductivity and photoluminescence (steady state and relaxation after switching off excitation) in a wide range of temperature and other conditions are considered. Interpretation data in terms of tunnel mechanisms of recombination are discussed.

UR - http://www.scopus.com/inward/record.url?scp=0022664372&partnerID=8YFLogxK

U2 - 10.1016/s0022-3093(87)80404-0

DO - 10.1016/s0022-3093(87)80404-0

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

AN - SCOPUS:0022664372

SN - 0022-3093

VL - 90

SP - 159

EP - 162

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

IS - 1-3

ER -

Recombination mechanisms of photogenerated carriers in a-Si:H

Abstract

Access to Document

Other files and links

Fingerprint

Cite this