Rapid thermal processing of implanted GaN up to 1500°C

X. A. Cao; S. J. Pearton; R. K. Singh; C. R. Abernathy; J. Han; R. J. Shul; D. J. Rieger; J. C. Zolper; R. G. Wilson; M. Fu; J. A. Sekhar; H. J. Guo; S. J. Pennycook

doi:10.1557/s1092578300003239

Rapid thermal processing of implanted GaN up to 1500°C

X. A. Cao, S. J. Pearton, R. K. Singh, C. R. Abernathy, J. Han, R. J. Shul, D. J. Rieger, J. C. Zolper, R. G. Wilson, M. Fu, J. A. Sekhar, H. J. Guo, S. J. Pennycook

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

GaN implanted with donor(Si, S, Se, Te) or acceptor (Be, Mg, C) species was annealed at 900-1500°C using AlN encapsulation. No redistribution was measured by SIMS for any of the dopants and effective diffusion coefficients are ≤2×10^-13 cm² · s^-1 at 1400°C, except Be, which displays damage-enhanced diffusion at 900°C and is immobile once the point defect concentration is removed. Activation efficiency of ∼90% is obtained for Si at 1400°C. TEM of the implanted material shows a strong reduction in lattice disorder at 1400-1500°C compared to previous results at 1100°C. There is minimal interaction of the sputtered AlN with GaN under our conditions, and it is readily removed selectively with KOH.

Original language	English
Journal	MRS Internet Journal of Nitride Semiconductor Research
Volume	4
Issue number	SUPPL. 1
DOIs	https://doi.org/10.1557/s1092578300003239
State	Published - 1999
Externally published	Yes

Access to Document

10.1557/s1092578300003239

Cite this

@article{e30cf1775fb94aaa802eb96f886cdd58,

title = "Rapid thermal processing of implanted GaN up to 1500°C",

abstract = "GaN implanted with donor(Si, S, Se, Te) or acceptor (Be, Mg, C) species was annealed at 900-1500°C using AlN encapsulation. No redistribution was measured by SIMS for any of the dopants and effective diffusion coefficients are ≤2×10-13 cm2 · s-1 at 1400°C, except Be, which displays damage-enhanced diffusion at 900°C and is immobile once the point defect concentration is removed. Activation efficiency of ∼90% is obtained for Si at 1400°C. TEM of the implanted material shows a strong reduction in lattice disorder at 1400-1500°C compared to previous results at 1100°C. There is minimal interaction of the sputtered AlN with GaN under our conditions, and it is readily removed selectively with KOH.",

author = "Cao, {X. A.} and Pearton, {S. J.} and Singh, {R. K.} and Abernathy, {C. R.} and J. Han and Shul, {R. J.} and Rieger, {D. J.} and Zolper, {J. C.} and Wilson, {R. G.} and M. Fu and Sekhar, {J. A.} and Guo, {H. J.} and Pennycook, {S. J.}",

year = "1999",

doi = "10.1557/s1092578300003239",

language = "אנגלית",

volume = "4",

journal = "MRS Internet Journal of Nitride Semiconductor Research",

issn = "1092-5783",

publisher = "Materials Research Society",

number = "SUPPL. 1",

}

TY - JOUR

T1 - Rapid thermal processing of implanted GaN up to 1500°C

AU - Cao, X. A.

AU - Pearton, S. J.

AU - Singh, R. K.

AU - Abernathy, C. R.

AU - Han, J.

AU - Shul, R. J.

AU - Rieger, D. J.

AU - Zolper, J. C.

AU - Wilson, R. G.

AU - Fu, M.

AU - Sekhar, J. A.

AU - Guo, H. J.

AU - Pennycook, S. J.

PY - 1999

Y1 - 1999

N2 - GaN implanted with donor(Si, S, Se, Te) or acceptor (Be, Mg, C) species was annealed at 900-1500°C using AlN encapsulation. No redistribution was measured by SIMS for any of the dopants and effective diffusion coefficients are ≤2×10-13 cm2 · s-1 at 1400°C, except Be, which displays damage-enhanced diffusion at 900°C and is immobile once the point defect concentration is removed. Activation efficiency of ∼90% is obtained for Si at 1400°C. TEM of the implanted material shows a strong reduction in lattice disorder at 1400-1500°C compared to previous results at 1100°C. There is minimal interaction of the sputtered AlN with GaN under our conditions, and it is readily removed selectively with KOH.

AB - GaN implanted with donor(Si, S, Se, Te) or acceptor (Be, Mg, C) species was annealed at 900-1500°C using AlN encapsulation. No redistribution was measured by SIMS for any of the dopants and effective diffusion coefficients are ≤2×10-13 cm2 · s-1 at 1400°C, except Be, which displays damage-enhanced diffusion at 900°C and is immobile once the point defect concentration is removed. Activation efficiency of ∼90% is obtained for Si at 1400°C. TEM of the implanted material shows a strong reduction in lattice disorder at 1400-1500°C compared to previous results at 1100°C. There is minimal interaction of the sputtered AlN with GaN under our conditions, and it is readily removed selectively with KOH.

UR - http://www.scopus.com/inward/record.url?scp=20244386794&partnerID=8YFLogxK

U2 - 10.1557/s1092578300003239

DO - 10.1557/s1092578300003239

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

AN - SCOPUS:20244386794

SN - 1092-5783

VL - 4

JO - MRS Internet Journal of Nitride Semiconductor Research

JF - MRS Internet Journal of Nitride Semiconductor Research

IS - SUPPL. 1

ER -

Rapid thermal processing of implanted GaN up to 1500°C

Abstract

Access to Document

Other files and links

Fingerprint

Cite this