Rapid thermal processing of implanted GaN UP to 1500 °C

X. A. Cao; S. J. Pearton; R. K. Singh; C. R. Abernathy; J. Han; R. J. Shul; D. J. Rieger; J. C. Zolper; R. G. Wilson; M. Fu; J. A. Sekhar; H. J. Guo; S. J. Pennycook

Rapid thermal processing of implanted GaN UP to 1500 °C

X. A. Cao, S. J. Pearton, R. K. Singh, C. R. Abernathy, J. Han, R. J. Shul, D. J. Rieger, J. C. Zolper, R. G. Wilson, M. Fu, J. A. Sekhar, H. J. Guo, S. J. Pennycook

Research output: Contribution to journal › Article › peer-review

Abstract

GaN implanted with donor(Si, S, Se, Te) or acceptor (Be, Mg, C) species was annealed at 900-1500 °C using A1N encapsulation. No redistribution was measured by SIMS for any of the dopants and effective diffusion coefficients are <2xlO"13 cm2 s"1 at 1400 °C, except Be, which displays damage-enhanced diffusion at 900 °C and is immobile once the point defect concentration is removed. Activation efficiency of-90% is obtained for Si at 1400 °C. TEM of the implanted material shows a strong reduction in lattice disorder at 1400-1500 °C compared to previous results at 1100 °C. There is minimal interaction of the sputtered A1N with GaN under our conditions, and it is readily removed selectively with KOH.

Original language	English
Pages (from-to)	G6.33
Journal	Materials Research Society Symposium - Proceedings
Volume	537
State	Published - 1999
Externally published	Yes

Cite this

@article{c18377c6a7f744d5a6b6cc253f8ba8e1,

title = "Rapid thermal processing of implanted GaN UP to 1500 °C",

abstract = "GaN implanted with donor(Si, S, Se, Te) or acceptor (Be, Mg, C) species was annealed at 900-1500 °C using A1N encapsulation. No redistribution was measured by SIMS for any of the dopants and effective diffusion coefficients are <2xlO{"}13 cm2 s{"}1 at 1400 °C, except Be, which displays damage-enhanced diffusion at 900 °C and is immobile once the point defect concentration is removed. Activation efficiency of-90% is obtained for Si at 1400 °C. TEM of the implanted material shows a strong reduction in lattice disorder at 1400-1500 °C compared to previous results at 1100 °C. There is minimal interaction of the sputtered A1N with GaN under our conditions, and it is readily removed selectively with KOH.",

author = "Cao, {X. A.} and Pearton, {S. J.} and Singh, {R. K.} and Abernathy, {C. R.} and J. Han and Shul, {R. J.} and Rieger, {D. J.} and Zolper, {J. C.} and Wilson, {R. G.} and M. Fu and Sekhar, {J. A.} and Guo, {H. J.} and Pennycook, {S. J.}",

year = "1999",

language = "אנגלית",

volume = "537",

pages = "G6.33",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

}

TY - JOUR

T1 - Rapid thermal processing of implanted GaN UP to 1500 °C

AU - Cao, X. A.

AU - Pearton, S. J.

AU - Singh, R. K.

AU - Abernathy, C. R.

AU - Han, J.

AU - Shul, R. J.

AU - Rieger, D. J.

AU - Zolper, J. C.

AU - Wilson, R. G.

AU - Fu, M.

AU - Sekhar, J. A.

AU - Guo, H. J.

AU - Pennycook, S. J.

PY - 1999

Y1 - 1999

N2 - GaN implanted with donor(Si, S, Se, Te) or acceptor (Be, Mg, C) species was annealed at 900-1500 °C using A1N encapsulation. No redistribution was measured by SIMS for any of the dopants and effective diffusion coefficients are <2xlO"13 cm2 s"1 at 1400 °C, except Be, which displays damage-enhanced diffusion at 900 °C and is immobile once the point defect concentration is removed. Activation efficiency of-90% is obtained for Si at 1400 °C. TEM of the implanted material shows a strong reduction in lattice disorder at 1400-1500 °C compared to previous results at 1100 °C. There is minimal interaction of the sputtered A1N with GaN under our conditions, and it is readily removed selectively with KOH.

AB - GaN implanted with donor(Si, S, Se, Te) or acceptor (Be, Mg, C) species was annealed at 900-1500 °C using A1N encapsulation. No redistribution was measured by SIMS for any of the dopants and effective diffusion coefficients are <2xlO"13 cm2 s"1 at 1400 °C, except Be, which displays damage-enhanced diffusion at 900 °C and is immobile once the point defect concentration is removed. Activation efficiency of-90% is obtained for Si at 1400 °C. TEM of the implanted material shows a strong reduction in lattice disorder at 1400-1500 °C compared to previous results at 1100 °C. There is minimal interaction of the sputtered A1N with GaN under our conditions, and it is readily removed selectively with KOH.

UR - http://www.scopus.com/inward/record.url?scp=0033322564&partnerID=8YFLogxK

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

AN - SCOPUS:0033322564

SN - 0272-9172

VL - 537

SP - G6.33

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

ER -

Rapid thermal processing of implanted GaN UP to 1500 °C

Abstract

Other files and links

Fingerprint

Cite this