Rapid thermal processing of implanted GaN UP to 1500 °C

X. A. Cao, S. J. Pearton, R. K. Singh, C. R. Abernathy, J. Han, R. J. Shul, D. J. Rieger, J. C. Zolper, R. G. Wilson, M. Fu, J. A. Sekhar, H. J. Guo, S. J. Pennycook

Research output: Contribution to journalArticlepeer-review


GaN implanted with donor(Si, S, Se, Te) or acceptor (Be, Mg, C) species was annealed at 900-1500 °C using A1N encapsulation. No redistribution was measured by SIMS for any of the dopants and effective diffusion coefficients are <2xlO"13 cm2 s"1 at 1400 °C, except Be, which displays damage-enhanced diffusion at 900 °C and is immobile once the point defect concentration is removed. Activation efficiency of-90% is obtained for Si at 1400 °C. TEM of the implanted material shows a strong reduction in lattice disorder at 1400-1500 °C compared to previous results at 1100 °C. There is minimal interaction of the sputtered A1N with GaN under our conditions, and it is readily removed selectively with KOH.

Original languageEnglish
Pages (from-to)G6.33
JournalMaterials Research Society Symposium - Proceedings
StatePublished - 1999
Externally publishedYes


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