Rapid and gentle chemical mechanical planarization of Wide BandGap semiconductors

Arul Chakkaravarthi Arjunan; Hung Ta Wang; Deepika Singh; Stephen J. Pearton; Fan Ren; Rajiv K. Singh

Rapid and gentle chemical mechanical planarization of Wide BandGap semiconductors

Arul Chakkaravarthi Arjunan, Hung Ta Wang, Deepika Singh, Stephen J. Pearton, Fan Ren, Rajiv K. Singh

Research output: Contribution to conference › Paper › peer-review

Abstract

The feasibility of the chemical mechanical planarization (CMP) to achieve atomic scale smoothening of wide band gap (WBG) semiconductor substrates has been studied. Chemical mechanical planarization (CMP) process, in which high polishing rate vs pressure slopes are obtained due to additives in the slurry. In this article, we discuss the CMP processing of WBG substrates and device fabrication on the processed substrates. Unique characterization methods are used to determine the changes on the wafer surfaces due to chemical effects of the slurry so that mechanisms for CMP can be delineated.

Original language	English
Pages	213-217
Number of pages	5
State	Published - 2007
Externally published	Yes
Event	12th International Chemical-Mechanical Planarization for ULSI Multilevel Interconnection Conference, CMP-MIC 2007 - Fremont, CA, United States Duration: 6 Mar 2007 → 8 Mar 2007

Conference

Conference	12th International Chemical-Mechanical Planarization for ULSI Multilevel Interconnection Conference, CMP-MIC 2007
Country/Territory	United States
City	Fremont, CA
Period	6/03/07 → 8/03/07

Cite this

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title = "Rapid and gentle chemical mechanical planarization of Wide BandGap semiconductors",

abstract = "The feasibility of the chemical mechanical planarization (CMP) to achieve atomic scale smoothening of wide band gap (WBG) semiconductor substrates has been studied. Chemical mechanical planarization (CMP) process, in which high polishing rate vs pressure slopes are obtained due to additives in the slurry. In this article, we discuss the CMP processing of WBG substrates and device fabrication on the processed substrates. Unique characterization methods are used to determine the changes on the wafer surfaces due to chemical effects of the slurry so that mechanisms for CMP can be delineated.",

author = "Arjunan, {Arul Chakkaravarthi} and Wang, {Hung Ta} and Deepika Singh and Pearton, {Stephen J.} and Fan Ren and Singh, {Rajiv K.}",

year = "2007",

language = "אנגלית",

pages = "213--217",

note = "12th International Chemical-Mechanical Planarization for ULSI Multilevel Interconnection Conference, CMP-MIC 2007 ; Conference date: 06-03-2007 Through 08-03-2007",

}

Rapid and gentle chemical mechanical planarization of Wide BandGap semiconductors. / Arjunan, Arul Chakkaravarthi; Wang, Hung Ta; Singh, Deepika et al.
2007. 213-217 Paper presented at 12th International Chemical-Mechanical Planarization for ULSI Multilevel Interconnection Conference, CMP-MIC 2007, Fremont, CA, United States.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Rapid and gentle chemical mechanical planarization of Wide BandGap semiconductors

AU - Arjunan, Arul Chakkaravarthi

AU - Wang, Hung Ta

AU - Singh, Deepika

AU - Pearton, Stephen J.

AU - Ren, Fan

AU - Singh, Rajiv K.

PY - 2007

Y1 - 2007

N2 - The feasibility of the chemical mechanical planarization (CMP) to achieve atomic scale smoothening of wide band gap (WBG) semiconductor substrates has been studied. Chemical mechanical planarization (CMP) process, in which high polishing rate vs pressure slopes are obtained due to additives in the slurry. In this article, we discuss the CMP processing of WBG substrates and device fabrication on the processed substrates. Unique characterization methods are used to determine the changes on the wafer surfaces due to chemical effects of the slurry so that mechanisms for CMP can be delineated.

AB - The feasibility of the chemical mechanical planarization (CMP) to achieve atomic scale smoothening of wide band gap (WBG) semiconductor substrates has been studied. Chemical mechanical planarization (CMP) process, in which high polishing rate vs pressure slopes are obtained due to additives in the slurry. In this article, we discuss the CMP processing of WBG substrates and device fabrication on the processed substrates. Unique characterization methods are used to determine the changes on the wafer surfaces due to chemical effects of the slurry so that mechanisms for CMP can be delineated.

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T2 - 12th International Chemical-Mechanical Planarization for ULSI Multilevel Interconnection Conference, CMP-MIC 2007

Y2 - 6 March 2007 through 8 March 2007

ER -

Rapid and gentle chemical mechanical planarization of Wide BandGap semiconductors

Abstract

Conference

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