Rapid and gentle chemical mechanical planarization of Wide BandGap semiconductors

Arul Chakkaravarthi Arjunan, Hung Ta Wang, Deepika Singh, Stephen J. Pearton, Fan Ren, Rajiv K. Singh

Research output: Contribution to conferencePaperpeer-review

Abstract

The feasibility of the chemical mechanical planarization (CMP) to achieve atomic scale smoothening of wide band gap (WBG) semiconductor substrates has been studied. Chemical mechanical planarization (CMP) process, in which high polishing rate vs pressure slopes are obtained due to additives in the slurry. In this article, we discuss the CMP processing of WBG substrates and device fabrication on the processed substrates. Unique characterization methods are used to determine the changes on the wafer surfaces due to chemical effects of the slurry so that mechanisms for CMP can be delineated.

Original languageEnglish
Pages213-217
Number of pages5
StatePublished - 2007
Externally publishedYes
Event12th International Chemical-Mechanical Planarization for ULSI Multilevel Interconnection Conference, CMP-MIC 2007 - Fremont, CA, United States
Duration: 6 Mar 20078 Mar 2007

Conference

Conference12th International Chemical-Mechanical Planarization for ULSI Multilevel Interconnection Conference, CMP-MIC 2007
Country/TerritoryUnited States
CityFremont, CA
Period6/03/078/03/07

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