Raman study of interface modes in GaSb/InAs superlattices with controlled interface composition

S. G. Lyapin, P. C. Klipstein, N. J. Mason, P. J. Walker

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

We have performed a Raman scattering study of GaSb/InAs superlattices grown by MOVPE using different gas switching sequences to control the interface type. The identification of an InSb interface mode, clearly resolved already at room temperature, has been revised. A strongly localised GaAs-like interface mode has been used for the first time to characterise sequentially grown interfaces in an independent and selective way.

Original languageEnglish
Pages (from-to)499-502
Number of pages4
JournalSuperlattices and Microstructures
Volume15
Issue number4
DOIs
StatePublished - Jun 1994
Externally publishedYes

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