Abstract
We have performed a Raman scattering study of GaSb/InAs superlattices grown by MOVPE using different gas switching sequences to control the interface type. The identification of an InSb interface mode, clearly resolved already at room temperature, has been revised. A strongly localised GaAs-like interface mode has been used for the first time to characterise sequentially grown interfaces in an independent and selective way.
Original language | English |
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Pages (from-to) | 499-502 |
Number of pages | 4 |
Journal | Superlattices and Microstructures |
Volume | 15 |
Issue number | 4 |
DOIs | |
State | Published - Jun 1994 |
Externally published | Yes |