Quasi-2D material based heterostructure devices and its applications

Vidushi Gautam, Sandeep Kumar Verma, Roshani Singh, Zaid Ashraf, Kavindra Kandpal, Pramod Kumar

Research output: Contribution to journalReview articlepeer-review

5 Scopus citations

Abstract

The structure and versatile interfacial properties of heterostructures of two-dimensional (2D) materials have drawn a lot of attention. The fundamental curiosity and efficient possibilities encourage the fabrication of 2D materials. 2D materials offer a variety of key elements with distinct optical, electrical, and optoelectronic characteristics. Recently, topological insulators became fascinating for the future of spintronics due to strongspin-orbit coupling and dissipation-less counter-propagating conduction channels in the surface state. When topological traits and magnetic order come together, they may result in new quantum states, leading to the quantum anomalous Hall effect. Here, an overview of 2D fabrication techniques, device applications, magnetic—topological coupling and interfacial effects in heterostructures is discussed, offering a flexible platform for engineering magnetic and topological properties, additionally providing perspectives on emerging research opportunities.

Original languageEnglish
Article number443002
JournalJournal of Physics D: Applied Physics
Volume57
Issue number44
DOIs
StatePublished - 8 Nov 2024
Externally publishedYes

Bibliographical note

Publisher Copyright:
© 2024 IOP Publishing Ltd.

Keywords

  • BiTe/n-GaN heterojunction
  • BiTe/n-GaN photodetector
  • heterojunction photoelectric effect
  • photoconductivity
  • topological insulator
  • topological insulator heterojunction
  • topological insulator photodetector

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