Quantum corrections to the resistance of Mo/Si multilayers

E. I. Buchstab; A. V. Butenko; N. Ya Fogel; V. G. Cherkasova; R. L. Rosenbaum

doi:10.1103/physrevb.50.10063

Quantum corrections to the resistance of Mo/Si multilayers

E. I. Buchstab
, A. V. Butenko
, N. Ya Fogel
, V. G. Cherkasova
, R. L. Rosenbaum

Department of Physics - at Bar-Ilan University

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

We report on resistance and magnetoresistance measurements in multilayer Mo/Si samples at temperatures of 1.5-300 K and magnetic fields up to 6 T. The temperature dependence of the conductivity can be entirely described by quantum interference effects. The experimental results are compared with calculations of the quantum corrections due to weak localization, electron-electron interactions, and supeconducting fluctuations. The resistance shows a crossover from two-dimensional (2D) to 3D behavior when the temperature is increased.

Original language	English
Pages (from-to)	10063-10068
Number of pages	6
Journal	Physical Review B-Condensed Matter
Volume	50
Issue number	14
DOIs	https://doi.org/10.1103/physrevb.50.10063
State	Published - 1994

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10.1103/physrevb.50.10063

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abstract = "We report on resistance and magnetoresistance measurements in multilayer Mo/Si samples at temperatures of 1.5-300 K and magnetic fields up to 6 T. The temperature dependence of the conductivity can be entirely described by quantum interference effects. The experimental results are compared with calculations of the quantum corrections due to weak localization, electron-electron interactions, and supeconducting fluctuations. The resistance shows a crossover from two-dimensional (2D) to 3D behavior when the temperature is increased.",

author = "Buchstab, \{E. I.\} and Butenko, \{A. V.\} and Fogel, \{N. Ya\} and Cherkasova, \{V. G.\} and Rosenbaum, \{R. L.\}",

year = "1994",

doi = "10.1103/physrevb.50.10063",

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AU - Buchstab, E. I.

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AU - Rosenbaum, R. L.

PY - 1994

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N2 - We report on resistance and magnetoresistance measurements in multilayer Mo/Si samples at temperatures of 1.5-300 K and magnetic fields up to 6 T. The temperature dependence of the conductivity can be entirely described by quantum interference effects. The experimental results are compared with calculations of the quantum corrections due to weak localization, electron-electron interactions, and supeconducting fluctuations. The resistance shows a crossover from two-dimensional (2D) to 3D behavior when the temperature is increased.

AB - We report on resistance and magnetoresistance measurements in multilayer Mo/Si samples at temperatures of 1.5-300 K and magnetic fields up to 6 T. The temperature dependence of the conductivity can be entirely described by quantum interference effects. The experimental results are compared with calculations of the quantum corrections due to weak localization, electron-electron interactions, and supeconducting fluctuations. The resistance shows a crossover from two-dimensional (2D) to 3D behavior when the temperature is increased.

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Quantum corrections to the resistance of Mo/Si multilayers

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